Shuya Ishii, Seiichi Saiki, S. Onoda, Y. Masuyama, H. Abe, T. Ohshima
{"title":"高通量电子束辐照制备的Ib型金刚石中带负电的氮空位中心系综","authors":"Shuya Ishii, Seiichi Saiki, S. Onoda, Y. Masuyama, H. Abe, T. Ohshima","doi":"10.3390/qubs6010002","DOIUrl":null,"url":null,"abstract":"Electron beam irradiation into type-Ib diamond is known as a good method for the creation of high concentration negatively-charged nitrogen-vacancy (NV−) centers by which highly sensitive quantum sensors can be fabricated. In order to understand the creation mechanism of NV− centers, we study the behavior of substitutional isolated nitrogen (P1 centers) and NV− centers in type-Ib diamond, with an initial P1 concentration of 40–80 ppm by electron beam irradiation up to 8.0 × 1018 electrons/cm2. P1 concentration and NV− concentration were measured using electron spin resonance and photoluminescence measurements. P1 center count decreases with increasing irradiation fluence up to 8.0 × 1018 electrons/cm2. The rate of decrease in P1 is slightly lower at irradiation fluence above 4.0 × 1018 electrons/cm2 especially for samples of low initial P1 concentration. Comparing concentration of P1 centers with that of NV− centers, it suggests that a part of P1 centers plays a role in the formation of other defects. The usefulness of electron beam irradiation to type-Ib diamonds was confirmed by the resultant conversion efficiency from P1 to NV− center around 12–19%.","PeriodicalId":31879,"journal":{"name":"Quantum Beam Science","volume":" ","pages":""},"PeriodicalIF":1.3000,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Ensemble Negatively-Charged Nitrogen-Vacancy Centers in Type-Ib Diamond Created by High Fluence Electron Beam Irradiation\",\"authors\":\"Shuya Ishii, Seiichi Saiki, S. Onoda, Y. Masuyama, H. Abe, T. Ohshima\",\"doi\":\"10.3390/qubs6010002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron beam irradiation into type-Ib diamond is known as a good method for the creation of high concentration negatively-charged nitrogen-vacancy (NV−) centers by which highly sensitive quantum sensors can be fabricated. In order to understand the creation mechanism of NV− centers, we study the behavior of substitutional isolated nitrogen (P1 centers) and NV− centers in type-Ib diamond, with an initial P1 concentration of 40–80 ppm by electron beam irradiation up to 8.0 × 1018 electrons/cm2. P1 concentration and NV− concentration were measured using electron spin resonance and photoluminescence measurements. P1 center count decreases with increasing irradiation fluence up to 8.0 × 1018 electrons/cm2. The rate of decrease in P1 is slightly lower at irradiation fluence above 4.0 × 1018 electrons/cm2 especially for samples of low initial P1 concentration. Comparing concentration of P1 centers with that of NV− centers, it suggests that a part of P1 centers plays a role in the formation of other defects. The usefulness of electron beam irradiation to type-Ib diamonds was confirmed by the resultant conversion efficiency from P1 to NV− center around 12–19%.\",\"PeriodicalId\":31879,\"journal\":{\"name\":\"Quantum Beam Science\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2021-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Quantum Beam Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/qubs6010002\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Beam Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/qubs6010002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
Ensemble Negatively-Charged Nitrogen-Vacancy Centers in Type-Ib Diamond Created by High Fluence Electron Beam Irradiation
Electron beam irradiation into type-Ib diamond is known as a good method for the creation of high concentration negatively-charged nitrogen-vacancy (NV−) centers by which highly sensitive quantum sensors can be fabricated. In order to understand the creation mechanism of NV− centers, we study the behavior of substitutional isolated nitrogen (P1 centers) and NV− centers in type-Ib diamond, with an initial P1 concentration of 40–80 ppm by electron beam irradiation up to 8.0 × 1018 electrons/cm2. P1 concentration and NV− concentration were measured using electron spin resonance and photoluminescence measurements. P1 center count decreases with increasing irradiation fluence up to 8.0 × 1018 electrons/cm2. The rate of decrease in P1 is slightly lower at irradiation fluence above 4.0 × 1018 electrons/cm2 especially for samples of low initial P1 concentration. Comparing concentration of P1 centers with that of NV− centers, it suggests that a part of P1 centers plays a role in the formation of other defects. The usefulness of electron beam irradiation to type-Ib diamonds was confirmed by the resultant conversion efficiency from P1 to NV− center around 12–19%.