SHS法研究B-N和B-N - xsio2氮化物陶瓷介电性能

IF 0.5 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

International Journal of Self-Propagating High-Temperature Synthesis Pub Date : 2023-01-09 DOI:10.3103/S1061386222040069

V. E. Loryan, A. V. Karpov, O. D. Boyarchenko, A. E. Sytschev

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引用次数: 0

摘要

采用高压氮气SHS法制备了B-N和B-N - xsio2氮化陶瓷。结果表明，BN-10 wt % SiO2和BN-25 wt % SiO2均以h-BN为基料，外加b60和Si。发现h-BN-xSiO2陶瓷呈鳞片状层状结构，随着SiO2的加入晶粒尺寸减小。高SiO2陶瓷具有良好的介电特性，介电常数为5.9 ~ 13.5，介电损耗正切为0.034。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Dielectric Properties of B–N and B–N–xSiO2 Nitride Ceramics by SHS

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Dielectric Properties of B–N and B–N–xSiO2 Nitride Ceramics by SHS

B–N and B–N–xSiO₂ nitride ceramics were prepared by SHS method under high pressure of nitrogen gas. It was shown that BN–10 wt % SiO₂ and BN–25 wt % SiO₂ contain h-BN as a basis with additions of B₆O and Si. h-BN–xSiO₂ ceramics were found to represent a scaly layered structure whose grain size decreased as SiO₂ was added. High SiO₂ ceramics showed high dielectric characteristics: dielectric permittivity of 5.9–13.5 and dielectric loss tangent of 0.034.

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来源期刊

International Journal of Self-Propagating High-Temperature Synthesis MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

33.30%

发文量

期刊介绍： International Journal of Self-Propagating High-Temperature Synthesis is an international journal covering a wide range of topics concerned with self-propagating high-temperature synthesis (SHS), the process for the production of advanced materials based on solid-state combustion utilizing internally generated chemical energy. Subjects range from the fundamentals of SHS processes, chemistry and technology of SHS products and advanced materials to problems concerned with related fields, such as the kinetics and thermodynamics of high-temperature chemical reactions, combustion theory, macroscopic kinetics of nonisothermic processes, etc. The journal is intended to provide a wide-ranging exchange of research results and a better understanding of developmental and innovative trends in SHS science and applications.