通过减轻准饱和效应提高射频LDMOS的线性和鲁棒性

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Haifeng Mo, Yaohui Zhang, Helun Song
{"title":"通过减轻准饱和效应提高射频LDMOS的线性和鲁棒性","authors":"Haifeng Mo, Yaohui Zhang, Helun Song","doi":"10.1155/2019/8425198","DOIUrl":null,"url":null,"abstract":"This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation. The high electric field at the drift region near the drain will cause more electron-hole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device. Devices with different drift region doping are simulated with TCAD and measured. With LDD4 doping, the peak electric field in the drift region is reduced; the linear region of the transconductance is broadened. The adjacent channel power ratio is decreased by 2 dBc; 12% more power can be discharged before the NPN transistor turn-on, indicating a better linearity and robustness.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":1.3000,"publicationDate":"2019-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/8425198","citationCount":"0","resultStr":"{\"title\":\"Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect\",\"authors\":\"Haifeng Mo, Yaohui Zhang, Helun Song\",\"doi\":\"10.1155/2019/8425198\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation. The high electric field at the drift region near the drain will cause more electron-hole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device. Devices with different drift region doping are simulated with TCAD and measured. With LDD4 doping, the peak electric field in the drift region is reduced; the linear region of the transconductance is broadened. The adjacent channel power ratio is decreased by 2 dBc; 12% more power can be discharged before the NPN transistor turn-on, indicating a better linearity and robustness.\",\"PeriodicalId\":43355,\"journal\":{\"name\":\"Active and Passive Electronic Components\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2019-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1155/2019/8425198\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Active and Passive Electronic Components\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1155/2019/8425198\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2019/8425198","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文首次将线性和鲁棒性结合起来讨论,揭示了一种改进线性和鲁棒性的方法。结果表明,器件工作在准饱和区域时的非线性跨导是影响器件线性度的重要因素。峰值电场是导致电子速度饱和的根本原因。在漏极附近的漂移区,高电场会导致产生更多的电子空穴对,从而触发寄生型NPN晶体管的导通,从而可能导致器件失效。用TCAD对不同漂移区掺杂的器件进行了模拟和测量。掺杂LDD4后,漂移区的峰值电场减小;跨导的线性区域被拓宽。相邻通道功率比降低2 dBc;在NPN晶体管导通之前,可以释放12%以上的功率,表明更好的线性和鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect
This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation. The high electric field at the drift region near the drain will cause more electron-hole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device. Devices with different drift region doping are simulated with TCAD and measured. With LDD4 doping, the peak electric field in the drift region is reduced; the linear region of the transconductance is broadened. The adjacent channel power ratio is decreased by 2 dBc; 12% more power can be discharged before the NPN transistor turn-on, indicating a better linearity and robustness.
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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