ICeGaNTM技术:易于使用和自我保护的GaN电源IC

Power electronic devices and components Pub Date : 2023-03-01 DOI:10.1016/j.pedc.2022.100028

Giorgia Longobardi, Loizos Efthymiou, John Findlay, Andrea Bricconi, Peter Comiskey, Martin Arnold, David Miller, Florin Udrea

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引用次数: 1

摘要

本文概述了横向GaN功率器件领域的技术现状，并介绍了主要的商用650 V GaN功率器件和集成电路的特点。给出了一个比较，无论是在关键参数方面，以及通过集成额外的智能功能的复杂功能的可用性。我们的新技术，称为ICeGaN™，在此背景下介绍，重点是当ICeGaN™设备用于常见应用时可能产生的好处。ICeGaN™是智能HEMT的新概念，在不牺牲性能的情况下提供易于使用，传感和保护功能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

ICeGaNTM technology: The easy-to-use and self-protected GaN power IC

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ICeGaNTM technology: The easy-to-use and self-protected GaN power IC

This work provides an overview of the current state of technology in the field of lateral GaN power devices and presents the characteristics of the main commercially available 650 V GaN power devices and ICs. A comparison is given, both in terms of key parameters as well as of the availability of complex functionality through integration of additional smart features. The features of our new technology, termed ICeGaN™, are presented in this context, focusing on the benefits that may be derived when ICeGaN™ devices are used in common applications. ICeGaN™ is a new concept of a smart HEMT which offers ease-of-use, sensing and protection functions without sacrificing performance.

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来源期刊

Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality

CiteScore

2.00

自引率

0.00%

发文量

审稿时长

80 days