异质集成中的铜键合技术

IF 2.1 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Yoon-Gu Lee, Michael McInerney, Young-Chang Joo, In-Suk Choi, Sarah Eunkyung Kim
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引用次数: 0

摘要

由于半导体器件的扩展面临严重的技术瓶颈,为了获得高性能、高密度、低延迟、低成本和小外形尺寸,垂直芯片堆叠技术应运而生。从最近的异构集成技术来看,这种堆叠技术作为核心技术受到了业界的高度关注。最重要的是,人们正在积极研究用铜键合来堆叠各种晶片或芯片,实现真正的三维封装。由于铜具有细间距图案化能力和高电气性能,并且采用了 CMOS 友好型工艺,因此正在成为最有吸引力的键合材料。遗憾的是,铜很快就会氧化,而且完全铜键合需要很高的键合温度,这大大超出了封装工艺的热预算。此外,为了提高互连密度,铜焊盘的尺寸也在不断减小。因此,人们研究了各种铜键合方法,以实现防止铜氧化、低键合温度和高密度细间距铜焊盘结构。此外,最近,混合键合(指铜焊盘与周围电介质同时键合)被认为是先进键合技术的一种可能解决方案。本文回顾了有关各种铜键合技术(包括铜/氧化物混合键合)的最新研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Copper Bonding Technology in Heterogeneous Integration

Copper Bonding Technology in Heterogeneous Integration

As semiconductor device scaling faces a severe technical bottleneck, vertical die stacking technologies have been developed to obtain high performance, high density, low latency, cost effectiveness and a small form factor. This stacking technology is receiving great attention from industry as a core technology from the point of view of recent heterogeneous integration technology. Most importantly, bonding using copper is aggressively studied to stack various wafers or dies and realize genuine three-dimensional packaging. Copper is emerging as the most attractive bonding material due to its fine-pitch patternability and high electrical performance with a CMOS-friendly process. Unfortunately, copper is quickly oxidized, and a high bonding temperature is required for complete Cu bonding, which greatly exceeds the thermal budget for the packaging process. Additionally, the size of Cu pads is decreasing to increase the density of interconnections. Therefore, various copper bonding methods have been studied to realize copper oxidation prevention, a low bonding temperature, and a fine-pitch Cu pad structure with a high density. Furthermore, recently, hybrid bonding, which refers to the simultaneous bonding of copper pads and surrounding dielectrics, has been considered a possible solution for advanced bonding technology. This paper reviews recent studies on various copper bonding technologies, including Cu/oxide hybrid bonding.

Graphical Abstract

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来源期刊
Electronic Materials Letters
Electronic Materials Letters 工程技术-材料科学:综合
CiteScore
4.70
自引率
20.80%
发文量
52
审稿时长
2.3 months
期刊介绍: Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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