As-S-Sb-Te多晶纳米结构半导体结构分析

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
O. Iaseniuc, M. Iovu, S. Rosoiu, M. Bardeanu, Laura-Bianca Enache, G. Mihai, O. Bordianu, V. Verlan, I. Culeac, I. Cojocaru, M. Enăchescu
{"title":"As-S-Sb-Te多晶纳米结构半导体结构分析","authors":"O. Iaseniuc, M. Iovu, S. Rosoiu, M. Bardeanu, Laura-Bianca Enache, G. Mihai, O. Bordianu, V. Verlan, I. Culeac, I. Cojocaru, M. Enăchescu","doi":"10.15251/cl.2022.1911.841","DOIUrl":null,"url":null,"abstract":"The aim of this paper is to characterize the polycrystalline and vitreous phases in the As2S3-Sb2S3-Sb2Te3 systems using several techniques such as XRD, SEM, EDS, and micro-Raman spectroscopy. The As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 semiconductor chalcogenide bulk glasses were examined using Scanning Electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), X-Ray diffraction (XRD) and micro-Raman analysis. The EDS quantitative and mapping analysis showed that for each investigated area, the identified elements were sulfur (S), arsenic (As), antimony (Sb) and tellurium (Te). These elements are present in constant atomic percentages on the entire sample, showing a good homogeneity of the samples. The study of samples by the above-mentioned methods showed the presence of crystalline phases and amorphous phases with the polycrystalline inclusions corresponding to the structural units AsS3, Sb2S3, and Sb2Те3.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.2000,"publicationDate":"2022-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural analysis of As-S-Sb-Te polycrystalline nanostructured semiconductors\",\"authors\":\"O. Iaseniuc, M. Iovu, S. Rosoiu, M. Bardeanu, Laura-Bianca Enache, G. Mihai, O. Bordianu, V. Verlan, I. Culeac, I. Cojocaru, M. Enăchescu\",\"doi\":\"10.15251/cl.2022.1911.841\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this paper is to characterize the polycrystalline and vitreous phases in the As2S3-Sb2S3-Sb2Te3 systems using several techniques such as XRD, SEM, EDS, and micro-Raman spectroscopy. The As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 semiconductor chalcogenide bulk glasses were examined using Scanning Electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), X-Ray diffraction (XRD) and micro-Raman analysis. The EDS quantitative and mapping analysis showed that for each investigated area, the identified elements were sulfur (S), arsenic (As), antimony (Sb) and tellurium (Te). These elements are present in constant atomic percentages on the entire sample, showing a good homogeneity of the samples. The study of samples by the above-mentioned methods showed the presence of crystalline phases and amorphous phases with the polycrystalline inclusions corresponding to the structural units AsS3, Sb2S3, and Sb2Те3.\",\"PeriodicalId\":9710,\"journal\":{\"name\":\"Chalcogenide Letters\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.2000,\"publicationDate\":\"2022-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chalcogenide Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/cl.2022.1911.841\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chalcogenide Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/cl.2022.1911.841","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本文的目的是利用XRD、SEM、EDS和微拉曼光谱等多种技术表征As2S3-Sb2S3-Sb2Te3体系中的多晶和玻璃体相。采用扫描电子显微镜(SEM)、能谱仪(EDS)、x射线衍射仪(XRD)和微拉曼分析对As1.17S2.7Sb0.83Te0.40、As1.04S2.4Sb0.96Te0.60、As0.63S2.7Sb1.37Te0.30和As0.56S2.4Sb1.44Te0.60半导体硫系体玻璃进行了表征。EDS定量分析和测图分析表明,在每个调查区域,鉴定出的元素分别是硫(S)、砷(As)、锑(Sb)和碲(Te)。这些元素在整个样品中以恒定的原子百分比存在,表明样品具有良好的均匀性。通过上述方法对样品的研究表明,样品中存在晶相和非晶相,其中多晶夹杂物对应的结构单元为AsS3、Sb2S3和Sb2Те3。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural analysis of As-S-Sb-Te polycrystalline nanostructured semiconductors
The aim of this paper is to characterize the polycrystalline and vitreous phases in the As2S3-Sb2S3-Sb2Te3 systems using several techniques such as XRD, SEM, EDS, and micro-Raman spectroscopy. The As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 semiconductor chalcogenide bulk glasses were examined using Scanning Electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), X-Ray diffraction (XRD) and micro-Raman analysis. The EDS quantitative and mapping analysis showed that for each investigated area, the identified elements were sulfur (S), arsenic (As), antimony (Sb) and tellurium (Te). These elements are present in constant atomic percentages on the entire sample, showing a good homogeneity of the samples. The study of samples by the above-mentioned methods showed the presence of crystalline phases and amorphous phases with the polycrystalline inclusions corresponding to the structural units AsS3, Sb2S3, and Sb2Те3.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信