掺汞诱导SrBPO5:241Am的自辐射:光谱透视

IF 2.2 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
M. Mohapatra , Santosh K. Gupta
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引用次数: 0

摘要

在本工作中,采用各种光谱技术研究了SrBPO5 (SBP)宿主矩阵中的241Am,以了解该系统的陷阱能级光谱特性。光致发光(PL)描述了Am在+3氧化态的稳定性,具有低局部对称性。另一方面,热释光(TL)表明SBP:241Am中自辐照缺陷的产生导致了463 K左右的发光曲线。电子自旋共振(ESR)进一步证实了在SBP中掺杂“Am”进行超细分裂可以产生轴对称硼酸根。我们可以进一步提出在SBP晶格中掺杂Am的TL发光曲线机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Americium doping induced self irradiation of SrBPO5: 241Am: Spectroscopic insight

Americium doping induced self irradiation of SrBPO5: 241Am: Spectroscopic insight

In the present work, 241Am incorporated in SrBPO5 (SBP) host matrix was investigated by various spectroscopic techniques to understand the trap level spectroscopic properties of the system. Photoluminescence (PL) depicted stabilization of Am in +3 oxidation state with low local symmetry. Thermoluminescence (TL) on the other hand suggested that creation of self irradiated defects in SBP:241Am leads to a glow curve around 463 K. Electron spin resonance (ESR) further confirmed the creation of borate radical in axial symmetry on doping ‘Am’ in SBP with hyperfine splitting. We could further propose the mechanism of TL glow curve on doping Am in the SBP lattice.

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来源期刊
CiteScore
3.10
自引率
0.00%
发文量
50
审稿时长
114 days
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