Awais Khalid , Pervaiz Ahmad , Ahmad M. Saeedi , Iram Liaqat , N.S. Abd EL-Gawaad , Sahar Ahmed Idris , Abdulaziz M. Alanazi , Amal H. Alsehli , Marwah M. Alsowayigh , Suliman A. Alderhami
{"title":"少量化学气相沉积二维WS2用于低压电阻开关","authors":"Awais Khalid , Pervaiz Ahmad , Ahmad M. Saeedi , Iram Liaqat , N.S. Abd EL-Gawaad , Sahar Ahmed Idris , Abdulaziz M. Alanazi , Amal H. Alsehli , Marwah M. Alsowayigh , Suliman A. Alderhami","doi":"10.1016/j.mee.2023.112083","DOIUrl":null,"url":null,"abstract":"<div><p><span>Optimizing the fabrication method gives rise to control over the deposition of WS</span><sub>2</sub><span><span> sheets in a CVD chamber. The deposition was executed on Pt-coated </span>silicon substrate so that electrical behavior of the WS</span><sub>2</sub><span> domains could be observed. Utilizing two types of electrode material helped in understanding the role of metal diffusion mediated switching failure. The Au/WS</span><sub>2</sub>/Pt/Ti/SiO<sub>2</sub><span>/Si device exhibited resistive switching characteristics at very low operating voltages. A high on/off ratio (>10</span><sup>4</sup>), high retention time (10<sup>4</sup> s), and a long endurance (1500 cycles) were respectively recorded to establish the non-volatile memory characteristics in a device with thin layer of WS<sub>2</sub><span><span>. The switching mechanism was established by performing conducting atomic force microscopy. This work also explained the mechanism of resistance switching in CVD grown </span>tungsten disulfide in two steps and pave the way for the development of large-scale devices.</span></p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2023-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Few layer chemical vapor deposited two dimensional WS2 for low voltage resistive switching application\",\"authors\":\"Awais Khalid , Pervaiz Ahmad , Ahmad M. Saeedi , Iram Liaqat , N.S. Abd EL-Gawaad , Sahar Ahmed Idris , Abdulaziz M. Alanazi , Amal H. Alsehli , Marwah M. Alsowayigh , Suliman A. Alderhami\",\"doi\":\"10.1016/j.mee.2023.112083\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p><span>Optimizing the fabrication method gives rise to control over the deposition of WS</span><sub>2</sub><span><span> sheets in a CVD chamber. The deposition was executed on Pt-coated </span>silicon substrate so that electrical behavior of the WS</span><sub>2</sub><span> domains could be observed. Utilizing two types of electrode material helped in understanding the role of metal diffusion mediated switching failure. The Au/WS</span><sub>2</sub>/Pt/Ti/SiO<sub>2</sub><span>/Si device exhibited resistive switching characteristics at very low operating voltages. A high on/off ratio (>10</span><sup>4</sup>), high retention time (10<sup>4</sup> s), and a long endurance (1500 cycles) were respectively recorded to establish the non-volatile memory characteristics in a device with thin layer of WS<sub>2</sub><span><span>. The switching mechanism was established by performing conducting atomic force microscopy. This work also explained the mechanism of resistance switching in CVD grown </span>tungsten disulfide in two steps and pave the way for the development of large-scale devices.</span></p></div>\",\"PeriodicalId\":18557,\"journal\":{\"name\":\"Microelectronic Engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2023-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S016793172300148X\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S016793172300148X","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Few layer chemical vapor deposited two dimensional WS2 for low voltage resistive switching application
Optimizing the fabrication method gives rise to control over the deposition of WS2 sheets in a CVD chamber. The deposition was executed on Pt-coated silicon substrate so that electrical behavior of the WS2 domains could be observed. Utilizing two types of electrode material helped in understanding the role of metal diffusion mediated switching failure. The Au/WS2/Pt/Ti/SiO2/Si device exhibited resistive switching characteristics at very low operating voltages. A high on/off ratio (>104), high retention time (104 s), and a long endurance (1500 cycles) were respectively recorded to establish the non-volatile memory characteristics in a device with thin layer of WS2. The switching mechanism was established by performing conducting atomic force microscopy. This work also explained the mechanism of resistance switching in CVD grown tungsten disulfide in two steps and pave the way for the development of large-scale devices.
期刊介绍：
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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