双端垂直晶闸管采用肖特基接触发射极改善热不稳定性

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Min-Won Kim, Ji-Hun Kim, Jun-Seong Park, Byoung-Seok Lee, S. Yoo, T. Shim, Jea‐Gun Park
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引用次数: 1

摘要

在双端电极垂直晶闸管中,当存储器单元的存储器操作温度增加时,锁存上电压和锁存下电压降低,导致严重的可靠性问题(即热不稳定性)。本研究通过使用具有垂直n++发射极、p++基极、n++基极和p++发射极结构的垂直晶闸管实现交叉点存储单元阵列,从根本上解决了垂直晶闸晶体管的热不稳定性。使用肖特基接触金属发射极代替n++-Si发射极的垂直晶闸管显著提高了293K和373K之间的热稳定性。特别地,使用肖特基触点金属功函数显著提高了热稳定性的改善程度。由于热不稳定性(即锁存电压递减程度与存储器操作温度)随着肖特基接触金属功函数的增加而降低,因此肖特基接触金属与p+-Si之间的正向电流密度基于存储器操作温度的依赖性随着肖特基接触金属功函数增加而降低。因此,更高的肖特基接触金属功函数在热稳定性方面产生更高程度的改善,即W(4.50eV)、Ti(4.33eV),Ta(4.25eV)和Al(4.12eV)。进一步研究肖特基接触金属发射极垂直晶闸管的制造工艺对于制造3D交叉点存储单元至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability
In a two-terminal-electrode vertical thyristor, the latch-up and latch-down voltages are decreased when the memory operation temperature of the memory cells increases, resulting in a severe reliability issue (i.e. thermal instability). This study fundamentally solves the thermal instability of a vertical-thyristor by achieving a cross-point memory-cell array using a vertical-thyristor with a structure of vertical n++-emitter, p+-base, n+-base, and p++-emitter. The vertical-thyristor using a Schottky contact metal emitter instead of an n++-Si emitter significantly improves the thermal stability between 293 K and 373 K. Particularly, the improvement degree of the thermal stability is increased significantly with the use of the Schottky contact metal work function. Because the thermal instability (i.e. degree of latch-up voltage decrement vs. memory operation temperature) decreases with an increase in the Schottky contact metal work function, the dependency of the forward current density between the Schottky contact metal and p+-Si based on the memory operation temperature reduces with increase in the Schottky contact metal work function. Consequently, a higher Schottky contact metal work function produces a higher degree of improvement in the thermal stability, i.e. W (4.50 eV), Ti (4.33 eV), Ta (4.25 eV), and Al (4.12 eV). Further research on the fabrication process of a Schottky contact metal emitter vertical-thyristor is essential for the fabrication of a 3D cross-point memory-cell.
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来源期刊
Nano Futures
Nano Futures Chemistry-General Chemistry
CiteScore
4.30
自引率
0.00%
发文量
35
期刊介绍: Nano Futures mission is to reflect the diverse and multidisciplinary field of nanoscience and nanotechnology that now brings together researchers from across physics, chemistry, biomedicine, materials science, engineering and industry.
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