芝诺悖论:一些著名的非线性掺杂漂移忆阻器模型具有无限的电阻开关时间

IF 0.5 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
R. Mutlu, T. D. Kumru
{"title":"芝诺悖论:一些著名的非线性掺杂漂移忆阻器模型具有无限的电阻开关时间","authors":"R. Mutlu, T. D. Kumru","doi":"10.13164/re.2023.0312","DOIUrl":null,"url":null,"abstract":". There are nonlinear drift memristor models uti-lizing window functions in the literature. The resistive memories can also be modeled using memristors. If the memristor’s resistance switches from its minimum value to its maximum value or from its maximum value to its minimum value, the transition phenomenon is called resistive or memristive switching. The value of the time required for this transition is especially important for resistive computer memory applications. The switching time is measured by experiments and should be calculatable from the parameters of the memristor model used. In the literature, to the best of our knowledge, the resistive switching times have not been calculated except for the HP memristor model and a piecewise linear memristor model. In this study, the memristive switching times of some of the well-known memristor models using a window function are calculated and found to be infinite. This is not feasible according to the experiments in which a finite memristive switching time is reported. Inspired by these results, a new memristor window function that results in a finite switching time is proposed. The results of this study and the criteria given here can be used to make more realistic memristor models in the future.","PeriodicalId":54514,"journal":{"name":"Radioengineering","volume":null,"pages":null},"PeriodicalIF":0.5000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Zeno Paradox: Some Well-known Nonlinear Dopant Drift Memristor Models Have Infinite Resistive Switching Time\",\"authors\":\"R. Mutlu, T. D. Kumru\",\"doi\":\"10.13164/re.2023.0312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\". There are nonlinear drift memristor models uti-lizing window functions in the literature. The resistive memories can also be modeled using memristors. If the memristor’s resistance switches from its minimum value to its maximum value or from its maximum value to its minimum value, the transition phenomenon is called resistive or memristive switching. The value of the time required for this transition is especially important for resistive computer memory applications. The switching time is measured by experiments and should be calculatable from the parameters of the memristor model used. In the literature, to the best of our knowledge, the resistive switching times have not been calculated except for the HP memristor model and a piecewise linear memristor model. In this study, the memristive switching times of some of the well-known memristor models using a window function are calculated and found to be infinite. This is not feasible according to the experiments in which a finite memristive switching time is reported. Inspired by these results, a new memristor window function that results in a finite switching time is proposed. The results of this study and the criteria given here can be used to make more realistic memristor models in the future.\",\"PeriodicalId\":54514,\"journal\":{\"name\":\"Radioengineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2023-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Radioengineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.13164/re.2023.0312\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radioengineering","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.13164/re.2023.0312","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

。文献中有利用窗函数的非线性漂移忆阻器模型。电阻式存储器也可以用忆阻器来建模。如果忆阻器的阻值从其最小值切换到最大值或从最大值切换到最小值,这种过渡现象称为电阻或忆阻开关。这种转换所需的时间值对于电阻式计算机存储器应用尤为重要。开关时间是通过实验测量的,并且可以从所使用的忆阻器模型的参数中计算出来。在文献中,据我们所知,除了HP忆阻器模型和分段线性忆阻器模型外,还没有计算过电阻开关时间。本文利用窗函数计算了一些著名的忆阻器模型的忆阻开关时间,发现它们是无穷大的。根据有限忆阻开关时间的实验,这是不可行的。受这些结果的启发,提出了一种新的有限开关时间的忆阻器窗函数。本研究的结果和本文给出的准则可用于将来制作更真实的忆阻器模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Zeno Paradox: Some Well-known Nonlinear Dopant Drift Memristor Models Have Infinite Resistive Switching Time
. There are nonlinear drift memristor models uti-lizing window functions in the literature. The resistive memories can also be modeled using memristors. If the memristor’s resistance switches from its minimum value to its maximum value or from its maximum value to its minimum value, the transition phenomenon is called resistive or memristive switching. The value of the time required for this transition is especially important for resistive computer memory applications. The switching time is measured by experiments and should be calculatable from the parameters of the memristor model used. In the literature, to the best of our knowledge, the resistive switching times have not been calculated except for the HP memristor model and a piecewise linear memristor model. In this study, the memristive switching times of some of the well-known memristor models using a window function are calculated and found to be infinite. This is not feasible according to the experiments in which a finite memristive switching time is reported. Inspired by these results, a new memristor window function that results in a finite switching time is proposed. The results of this study and the criteria given here can be used to make more realistic memristor models in the future.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Radioengineering
Radioengineering 工程技术-工程:电子与电气
CiteScore
2.00
自引率
9.10%
发文量
0
审稿时长
5.7 months
期刊介绍: Since 1992, the Radioengineering Journal has been publishing original scientific and engineering papers from the area of wireless communication and application of wireless technologies. The submitted papers are expected to deal with electromagnetics (antennas, propagation, microwaves), signals, circuits, optics and related fields. Each issue of the Radioengineering Journal is started by a feature article. Feature articles are organized by members of the Editorial Board to present the latest development in the selected areas of radio engineering. The Radioengineering Journal makes a maximum effort to publish submitted papers as quickly as possible. The first round of reviews should be completed within two months. Then, authors are expected to improve their manuscript within one month. If substantial changes are recommended and further reviews are requested by the reviewers, the publication time is prolonged.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信