{"title":"用于高数据速率高级物联网和微波应用的毫瓦接收器:Dickson探测器中体偏和级比的新开发","authors":"Aasish Boora, Bharatha Kumar Thangarasu, K. Yeo","doi":"10.1109/mnano.2022.3160771","DOIUrl":null,"url":null,"abstract":"This work presents a single-chip nanowatt receiver with three main design blocks: the input matching network (IMN), the envelope detector (ED), and the comparator. A center-symmetric pseudobalun Dickson detector with body-bias control is proposed to enhance the receiver performance in terms of sensitivity and low dc power consumption at higher data rates. The receiver supports ON–OFF keying (OOK)-modulated signals in the 2.4-GHz Industry, Science, Medicine (ISM) band at data rates up to 400 Kb/s, achieves a measured latency of only ${3}{.}{87}\\hspace{0.33em}\\mathit{\\mu}\\hspace{0.06em}{\\text{s}}{,}$ and consumes only 11.7 nW of power. The receiver is implemented in a 40-nm CMOS process and operates from 0.8- and 0.5-V supply voltages.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"16-25"},"PeriodicalIF":2.3000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nanowatt Receiver for High-Data-Rate Advanced Internet of Things and Microwave Applications: A novel exploitation of body bias and stage ratios in a Dickson detector\",\"authors\":\"Aasish Boora, Bharatha Kumar Thangarasu, K. Yeo\",\"doi\":\"10.1109/mnano.2022.3160771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a single-chip nanowatt receiver with three main design blocks: the input matching network (IMN), the envelope detector (ED), and the comparator. A center-symmetric pseudobalun Dickson detector with body-bias control is proposed to enhance the receiver performance in terms of sensitivity and low dc power consumption at higher data rates. The receiver supports ON–OFF keying (OOK)-modulated signals in the 2.4-GHz Industry, Science, Medicine (ISM) band at data rates up to 400 Kb/s, achieves a measured latency of only ${3}{.}{87}\\\\hspace{0.33em}\\\\mathit{\\\\mu}\\\\hspace{0.06em}{\\\\text{s}}{,}$ and consumes only 11.7 nW of power. The receiver is implemented in a 40-nm CMOS process and operates from 0.8- and 0.5-V supply voltages.\",\"PeriodicalId\":44724,\"journal\":{\"name\":\"IEEE Nanotechnology Magazine\",\"volume\":\"16 1\",\"pages\":\"16-25\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Nanotechnology Magazine\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/mnano.2022.3160771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Nanotechnology Magazine","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mnano.2022.3160771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
Nanowatt Receiver for High-Data-Rate Advanced Internet of Things and Microwave Applications: A novel exploitation of body bias and stage ratios in a Dickson detector
This work presents a single-chip nanowatt receiver with three main design blocks: the input matching network (IMN), the envelope detector (ED), and the comparator. A center-symmetric pseudobalun Dickson detector with body-bias control is proposed to enhance the receiver performance in terms of sensitivity and low dc power consumption at higher data rates. The receiver supports ON–OFF keying (OOK)-modulated signals in the 2.4-GHz Industry, Science, Medicine (ISM) band at data rates up to 400 Kb/s, achieves a measured latency of only ${3}{.}{87}\hspace{0.33em}\mathit{\mu}\hspace{0.06em}{\text{s}}{,}$ and consumes only 11.7 nW of power. The receiver is implemented in a 40-nm CMOS process and operates from 0.8- and 0.5-V supply voltages.
期刊介绍:
IEEE Nanotechnology Magazine publishes peer-reviewed articles that present emerging trends and practices in industrial electronics product research and development, key insights, and tutorial surveys in the field of interest to the member societies of the IEEE Nanotechnology Council. IEEE Nanotechnology Magazine will be limited to the scope of the Nanotechnology Council, which supports the theory, design, and development of nanotechnology and its scientific, engineering, and industrial applications.