体铋的高能x射线光电子能谱（HAXPES）Cr Kα测定

IF 1.6 Q3 PHYSICS, CONDENSED MATTER

Surface Science Spectra Pub Date : 2023-08-18 DOI:10.1116/6.0002703

C. Zborowski, I. Hoflijk, I. Vaesen, A. Vanleenhove, K. Artyushkova, T. Conard

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引用次数: 0

摘要

采用高分辨率高能x射线光电子能谱(HAXPES)对铋箔进行了分析。利用单色Cr Kα辐射在5414.8 eV下获得铋的HAXPES光谱，包括Bi 2p3/2、Bi 3d5/2、Bi 4s、Bi 4p3/2、Bi 4d5/2和Bi 4f的巡天扫描和高分辨率光谱。

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High energy x-ray photoelectron spectroscopy (HAXPES) Cr Kα measurement of bulk bismuth

A bismuth foil was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of bismuth obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of Bi 2p3/2, Bi 3d5/2, Bi 4s, Bi 4p3/2, Bi 4d5/2, and Bi 4f.

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来源期刊

Surface Science Spectra PHYSICS, CONDENSED MATTER-

CiteScore

1.90

自引率

7.70%

发文量