高氢流量漂浮催化剂化学气相沉积法直接合成氮掺杂窄直径碳纳米管

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2023-08-28 DOI:10.35848/1882-0786/acf487

Zhikai Li, T. Fujimori, Samuel Jeong, Hirotaka Inoue, Momoko Sakai, Keishi Akada, Yoshikazu Ito, J. Fujita

{"title":"高氢流量漂浮催化剂化学气相沉积法直接合成氮掺杂窄直径碳纳米管","authors":"Zhikai Li, T. Fujimori, Samuel Jeong, Hirotaka Inoue, Momoko Sakai, Keishi Akada, Yoshikazu Ito, J. Fujita","doi":"10.35848/1882-0786/acf487","DOIUrl":null,"url":null,"abstract":"The precise control of substitutional nitrogen (N) doping into a carbon nanotube (CNT) lattice is key to tuning their unique one-dimensional electronic properties. Here we report a direct synthesis of high-quality N-doped single-wall CNTs (N-SWCNTs) with ∼1 nm in diameter using a floating-catalyst chemical vapor deposition under a high flow rate of hydrogen as a carrier gas. The high hydrogen flow rate enhances the total N content in the CNT lattice. The N-SWCNTs exhibit an n-type doping behavior induced by enriched graphitic-N as confirmed by Raman analysis. Our finding will be beneficial to tailoring the doping state of N-SWCNTs.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3000,"publicationDate":"2023-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Direct synthesis of nitrogen-doped narrow-diameter carbon nanotubes through floating-catalyst chemical vapor deposition with high hydrogen flow rate\",\"authors\":\"Zhikai Li, T. Fujimori, Samuel Jeong, Hirotaka Inoue, Momoko Sakai, Keishi Akada, Yoshikazu Ito, J. Fujita\",\"doi\":\"10.35848/1882-0786/acf487\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The precise control of substitutional nitrogen (N) doping into a carbon nanotube (CNT) lattice is key to tuning their unique one-dimensional electronic properties. Here we report a direct synthesis of high-quality N-doped single-wall CNTs (N-SWCNTs) with ∼1 nm in diameter using a floating-catalyst chemical vapor deposition under a high flow rate of hydrogen as a carrier gas. The high hydrogen flow rate enhances the total N content in the CNT lattice. The N-SWCNTs exhibit an n-type doping behavior induced by enriched graphitic-N as confirmed by Raman analysis. Our finding will be beneficial to tailoring the doping state of N-SWCNTs.\",\"PeriodicalId\":8093,\"journal\":{\"name\":\"Applied Physics Express\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2023-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Express\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1882-0786/acf487\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1882-0786/acf487","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

精确控制取代氮(N)掺杂到碳纳米管(CNT)晶格中是调整其独特的一维电子特性的关键。在这里，我们报道了在高流速氢气作为载气的条件下，使用漂浮催化剂化学气相沉积直接合成高质量的n掺杂单壁碳纳米管(N-SWCNTs)，直径约为1 nm。高氢流速提高了碳纳米管晶格中的总氮含量。拉曼分析证实，N-SWCNTs表现出富集石墨- n诱导的n型掺杂行为。我们的发现将有助于调整N-SWCNTs的掺杂状态。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Direct synthesis of nitrogen-doped narrow-diameter carbon nanotubes through floating-catalyst chemical vapor deposition with high hydrogen flow rate

The precise control of substitutional nitrogen (N) doping into a carbon nanotube (CNT) lattice is key to tuning their unique one-dimensional electronic properties. Here we report a direct synthesis of high-quality N-doped single-wall CNTs (N-SWCNTs) with ∼1 nm in diameter using a floating-catalyst chemical vapor deposition under a high flow rate of hydrogen as a carrier gas. The high hydrogen flow rate enhances the total N content in the CNT lattice. The N-SWCNTs exhibit an n-type doping behavior induced by enriched graphitic-N as confirmed by Raman analysis. Our finding will be beneficial to tailoring the doping state of N-SWCNTs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).