用于高速观测和材料纳米加工的氮化半导体光电阴极脉冲透射电镜的研制

IF 1.3 Q3 INSTRUMENTS & INSTRUMENTATION
H. Yasuda, T. Nishitani, S. Ichikawa, S. Hatanaka, Y. Honda, H. Amano
{"title":"用于高速观测和材料纳米加工的氮化半导体光电阴极脉冲透射电镜的研制","authors":"H. Yasuda, T. Nishitani, S. Ichikawa, S. Hatanaka, Y. Honda, H. Amano","doi":"10.3390/QUBS5010005","DOIUrl":null,"url":null,"abstract":"The development of pulsed electron sources is applied to electron microscopes or electron beam lithography and is effective in expanding the functions of such devices. The laser photocathode can generate short pulsed electrons with high emittance, and the emittance can be increased by changing the cathode substrate from a metal to compound semiconductor. Among the substrates, nitride-based semiconductors with a negative electron affinity (NEA) have good advantages in terms of vacuum environment and cathode lifetime. In the present study, we report the development of a photocathode electron gun that utilizes photoelectron emission from a NEA-InGaN substrate by pulsed laser excitation, and the purpose is to apply it to material nanofabrication and high-speed observation using a pulsed transmission electron microscope (TEM) equipped with it.","PeriodicalId":31879,"journal":{"name":"Quantum Beam Science","volume":" ","pages":""},"PeriodicalIF":1.3000,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.3390/QUBS5010005","citationCount":"4","resultStr":"{\"title\":\"Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication\",\"authors\":\"H. Yasuda, T. Nishitani, S. Ichikawa, S. Hatanaka, Y. Honda, H. Amano\",\"doi\":\"10.3390/QUBS5010005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of pulsed electron sources is applied to electron microscopes or electron beam lithography and is effective in expanding the functions of such devices. The laser photocathode can generate short pulsed electrons with high emittance, and the emittance can be increased by changing the cathode substrate from a metal to compound semiconductor. Among the substrates, nitride-based semiconductors with a negative electron affinity (NEA) have good advantages in terms of vacuum environment and cathode lifetime. In the present study, we report the development of a photocathode electron gun that utilizes photoelectron emission from a NEA-InGaN substrate by pulsed laser excitation, and the purpose is to apply it to material nanofabrication and high-speed observation using a pulsed transmission electron microscope (TEM) equipped with it.\",\"PeriodicalId\":31879,\"journal\":{\"name\":\"Quantum Beam Science\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2021-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.3390/QUBS5010005\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Quantum Beam Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/QUBS5010005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Beam Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/QUBS5010005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
引用次数: 4

摘要

脉冲电子源的开发应用于电子显微镜或电子束光刻,并且在扩展这种器件的功能方面是有效的。激光光电阴极可以产生高发射率的短脉冲电子,并且可以通过将阴极衬底从金属改为化合物半导体来提高发射率。在衬底中,具有负电子亲和性(NEA)的氮化物基半导体在真空环境和阴极寿命方面具有良好的优势。在本研究中,我们报道了一种光电阴极电子枪的开发,该电子枪通过脉冲激光激发利用NEA-InGaN衬底的光电子发射,目的是将其应用于材料纳米制造和使用配备该电子枪的脉冲透射电子显微镜(TEM)的高速观察。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication
The development of pulsed electron sources is applied to electron microscopes or electron beam lithography and is effective in expanding the functions of such devices. The laser photocathode can generate short pulsed electrons with high emittance, and the emittance can be increased by changing the cathode substrate from a metal to compound semiconductor. Among the substrates, nitride-based semiconductors with a negative electron affinity (NEA) have good advantages in terms of vacuum environment and cathode lifetime. In the present study, we report the development of a photocathode electron gun that utilizes photoelectron emission from a NEA-InGaN substrate by pulsed laser excitation, and the purpose is to apply it to material nanofabrication and high-speed observation using a pulsed transmission electron microscope (TEM) equipped with it.
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来源期刊
CiteScore
2.80
自引率
28.60%
发文量
27
审稿时长
11 weeks
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