{"title":"具有寄生效应的亚微米HEMT亚阈值斜率的计算","authors":"A. Deyasi, G. Saha, Biplab Sen, A. Sarkar","doi":"10.1680/JNAEN.19.00018","DOIUrl":null,"url":null,"abstract":"The subthreshold slope of a submicron high-electron-mobility transistor (HEMT) is analytically computed as a function of vertical electric field for various parasitic effects and structural paramet...","PeriodicalId":44365,"journal":{"name":"Nanomaterials and Energy","volume":"9 1","pages":"195-201"},"PeriodicalIF":0.3000,"publicationDate":"2020-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1680/JNAEN.19.00018","citationCount":"0","resultStr":"{\"title\":\"Computation of subthreshold slope in submicron HEMT with parasitic effects\",\"authors\":\"A. Deyasi, G. Saha, Biplab Sen, A. Sarkar\",\"doi\":\"10.1680/JNAEN.19.00018\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The subthreshold slope of a submicron high-electron-mobility transistor (HEMT) is analytically computed as a function of vertical electric field for various parasitic effects and structural paramet...\",\"PeriodicalId\":44365,\"journal\":{\"name\":\"Nanomaterials and Energy\",\"volume\":\"9 1\",\"pages\":\"195-201\"},\"PeriodicalIF\":0.3000,\"publicationDate\":\"2020-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1680/JNAEN.19.00018\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanomaterials and Energy\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1680/JNAEN.19.00018\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanomaterials and Energy","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1680/JNAEN.19.00018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Computation of subthreshold slope in submicron HEMT with parasitic effects
The subthreshold slope of a submicron high-electron-mobility transistor (HEMT) is analytically computed as a function of vertical electric field for various parasitic effects and structural paramet...
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