铁磁单层Fe3GeTe2中的电子输运和散射机制

IF 9.1 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Danis I. Badrtdinov, Georgy V. Pushkarev, Mikhail I. Katsnelson, Alexander N. Rudenko
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引用次数: 1

摘要

我们研究了本征电荷载流子散射机制,并确定了它们对二维铁磁体 Fe3GeTe2 传输特性的贡献。我们使用最先进的第一原理计算结合模型方法来阐明电子-声子和电子-磁子相互作用在电子传输中的作用。我们的研究结果表明,Fe3GeTe2 中的电荷载流子散射由电子-声子相互作用主导,而磁激发的作用则微不足道。同时,磁有序对电子-声子耦合及其温度依赖性也有重要影响。这导致电阻率在居里温度附近呈现亚线性温度依赖性,这与实验观测结果一致。室温电阻率估计为 ~ 35 μΩ ⋅ cm,这可视为单层 Fe3GeTe2 的内在下限。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Electron transport and scattering mechanisms in ferromagnetic monolayer Fe3GeTe2

Electron transport and scattering mechanisms in ferromagnetic monolayer Fe3GeTe2

Electron transport and scattering mechanisms in ferromagnetic monolayer Fe3GeTe2
We study intrinsic charge-carrier scattering mechanisms and determine their contribution to the transport properties of the two-dimensional ferromagnet Fe3GeTe2. We use state-of-the-art first-principles calculations combined with the model approaches to elucidate the role of the electron-phonon and electron-magnon interactions in the electronic transport. Our findings show that the charge carrier scattering in Fe3GeTe2 is dominated by the electron-phonon interaction, while the role of magnetic excitations is marginal. At the same time, the magnetic ordering is shown to effect essentially on the electron-phonon coupling and its temperature dependence. This leads to a sublinear temperature dependence of the electrical resistivity near the Curie temperature, which is in line with experimental observations. The room temperature resistivity is estimated to be ~ 35 μΩ ⋅ cm which may be considered as a lower intrinsic limit for monolayer Fe3GeTe2.
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来源期刊
npj 2D Materials and Applications
npj 2D Materials and Applications Engineering-Mechanics of Materials
CiteScore
14.50
自引率
2.10%
发文量
80
审稿时长
15 weeks
期刊介绍: npj 2D Materials and Applications publishes papers on the fundamental behavior, synthesis, properties and applications of existing and emerging 2D materials. By selecting papers with the potential for impact, the journal aims to facilitate the transfer of the research of 2D materials into wide-ranging applications.
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