基于0.13 μm CMOS工艺的超低功耗超宽带(5ghz - 10ghz)低噪声放大器设计

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2020-03-30 DOI:10.1155/2020/8537405

Hemad Heidari Jobaneh

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引用次数: 1

摘要

提出了一种超低功率低噪声放大器的计算与设计方法。LNA工作在5 GHz到10 GHz之间，采用前向体偏置技术降低电路功耗。该设计围绕着输入阻抗、输出阻抗和电路增益的精确计算。利用MATLAB和高级设计系统(ADS)对LNA进行了设计和仿真。此外，ADS采用TSMC 0.13 μm CMOS工艺，LNA采用两个不同的电压源进行偏置，以降低功耗。噪声系数(NF)、输入匹配(S11)、增益(S21)、IIP3、功耗分别为1.46 dB ~ 2.27 dB、−11.25 dB、13.82 dB、−8.5、963 μW。

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The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology

The calculation and design of an ultralow-power Low Noise Amplifier (LNA) are proposed in this paper. The LNA operates from 5 GHz to 10 GHz, and forward body biasing technique is used to bring down power consumption of the circuit. The design revolves around precise calculations related to input impedance, output impedance, and the gain of the circuit. MATLAB and Advanced Design System (ADS) are utilized to design and simulate the LNA. In addition, TSMC 0.13 μm CMOS process is used in ADS. The LNA is biased with two different voltage supplies in order to reduce power consumption. Noise Figure (NF), input matching (S11), gain (S21), IIP3, and power dissipation are 1.46 dB–2.27 dB, −11.25 dB, 13.82 dB, −8.5, and 963 μW, respectively.

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.