酶基场效应晶体管:技术现状和未来展望

IF 2.9 Q2 ELECTROCHEMISTRY
Lucia Sarcina, Eleonora Macchia, Angelo Tricase, Cecilia Scandurra, Anna Imbriano, Fabrizio Torricelli, Nicola Cioffi, Luisa Torsi, Paolo Bollella
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引用次数: 6

摘要

这篇综述揭示了酶基场效应晶体管(enfet)的历史和技术发展,揭示了栅极电极修饰对实现新型场效应管结构(如扩展栅极场效应管(EG-FET)或EG有机场效应管(EG- ofet))的重要性。1970年Bergveld将EnFET定义为酶膜修饰的离子选择性场效应管(ISFET),并根据与EnFET输出响应相关的解析方程讨论了EnFET的工作原理。对于每个类别,即enfet, eg - fet和eg - ofet,我们回顾了过去40年来解决该领域研究的关键器件配置,并特别关注优点的分析数字。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Enzyme based field effect transistor: State-of-the-art and future perspectives

Enzyme based field effect transistor: State-of-the-art and future perspectives

The review discloses the historical and technological evolution of enzyme-based field-effect transistors (EnFETs) underlying the importance of gate electrode modification toward the implementation of novel FETs configurations such as extended-gate FET (EG-FETs) or EG organic FETs (EG-OFETs). The working principle of the EnFETs as postulated by Bergveld in 1970, who defined the EnFET as an ion-selective FET (ISFET) modified with enzyme-membrane, is also discussed considering the analytical equations related to the EnFET output response. For each category, namely EnFETs, EG-FETs, and EG-OFETs, we reviewed the key devices’ configurations that addressed the research in this field in the last 40 years with particular attention to the analytical figures of merit.

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CiteScore
3.80
自引率
0.00%
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