Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET

Lowering power consumption has emerged as the primary goal as silicon circuits become more compact. Furthermore, the ultra-highly integrated circuit will unavoidably generate a substantial amount of heat. A novel mathematical modeling method is defined for the analysis of a ferroelectric-based negative capacitance field-effect transistor (NCFET) that will adequately address the non-uniformity in polarization switching and subthreshold behavior. This study analyses the I–V and C–V properties of a lithium niobate (LiNbO\(_{3}\)) ferroelectric material-based metal–ferroelectric–metal–insulator–semiconductor NCFET. Device parameters including drain current, polarization factor, capacitance, total charge density, and subthreshold swing are evaluated in accordance with the calibration performed considering different variables, such as ferroelectric materials, gate bias modification, and ferroelectric thickness. Numerical simulation is also performed using the Silvaco ATLAS TCAD tool to simulate and calibrate the above-mentioned parameters. MATLAB simulation is initially performed to solve the ferroelectric 1-D Landau–Khalatnikov equation, which is then used for subsequent analyses. The proposed device also starts to exhibit hysteresis behavior at low ferroelectric thicknesses. The simulations demonstrate a 45% increase in the potential curve, thus proving the device to be a viable contender for low-power applications.