{"title":"在铜嵌入的AZO/Cu/AZO异质界面上构建高效的光电性能","authors":"Jianpei Wang, and , Ping Yang*, ","doi":"10.1021/acs.cgd.3c00797","DOIUrl":null,"url":null,"abstract":"<p >The AZO/Cu/AZO heterogeneous interface is prepared to improve the optoelectronic property of AZO as Cu intercalation is introduced. The experimental results show that the Cu layer is at 8 nm, the (002) peak intensity of the sample reaches the maximum, the crystallization quality is the best, the roughness is the lowest, and the transmittance and conductivity have better values. In the meantime, the simulation results show that the interface of AZO/Cu is bonded, and the conductivity of AZO/Cu is higher than that of AZO, but the transmittance is the opposite. This is consistent with the experimental results. The research implies that we can design efficient optoelectronic properties with an AZO/Cu/AZO heterogeneous interface by adjusting Cu intercalation.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":"23 10","pages":"7403–7411"},"PeriodicalIF":3.2000,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Building an Efficient Optoelectronic Property at the AZO/Cu/AZO Heterogeneous Interface with Copper Intercalation\",\"authors\":\"Jianpei Wang, and , Ping Yang*, \",\"doi\":\"10.1021/acs.cgd.3c00797\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >The AZO/Cu/AZO heterogeneous interface is prepared to improve the optoelectronic property of AZO as Cu intercalation is introduced. The experimental results show that the Cu layer is at 8 nm, the (002) peak intensity of the sample reaches the maximum, the crystallization quality is the best, the roughness is the lowest, and the transmittance and conductivity have better values. In the meantime, the simulation results show that the interface of AZO/Cu is bonded, and the conductivity of AZO/Cu is higher than that of AZO, but the transmittance is the opposite. This is consistent with the experimental results. The research implies that we can design efficient optoelectronic properties with an AZO/Cu/AZO heterogeneous interface by adjusting Cu intercalation.</p>\",\"PeriodicalId\":34,\"journal\":{\"name\":\"Crystal Growth & Design\",\"volume\":\"23 10\",\"pages\":\"7403–7411\"},\"PeriodicalIF\":3.2000,\"publicationDate\":\"2023-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystal Growth & Design\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.cgd.3c00797\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Growth & Design","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.cgd.3c00797","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Building an Efficient Optoelectronic Property at the AZO/Cu/AZO Heterogeneous Interface with Copper Intercalation
The AZO/Cu/AZO heterogeneous interface is prepared to improve the optoelectronic property of AZO as Cu intercalation is introduced. The experimental results show that the Cu layer is at 8 nm, the (002) peak intensity of the sample reaches the maximum, the crystallization quality is the best, the roughness is the lowest, and the transmittance and conductivity have better values. In the meantime, the simulation results show that the interface of AZO/Cu is bonded, and the conductivity of AZO/Cu is higher than that of AZO, but the transmittance is the opposite. This is consistent with the experimental results. The research implies that we can design efficient optoelectronic properties with an AZO/Cu/AZO heterogeneous interface by adjusting Cu intercalation.
期刊介绍：
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
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