磷和镓从磷化镓沉积层向硅中的扩散

IF 0.9 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Physics of the Solid State Pub Date : 2023-03-02 DOI:10.1134/S1063783422110154

N. F. Zikrillaev, S. V. Koveshnikov, Kh. S. Turekeev, N. Norkulov, S. A. Tachilin

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引用次数: 0

摘要

研究了沉积在硅表面的磷化镓的扩散。扩散后，用范德泡法和扫描电镜对硅样品进行检测，以确定磷和镓杂质原子的浓度分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

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Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface is studied. After diffusion, the silicon samples are examined using the Van der Pauw method and a scanning electron microscopy in order to determine the concentration distribution of impurity atoms of phosphorus and gallium.

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来源期刊

Physics of the Solid State 物理-物理：凝聚态物理

CiteScore

1.70

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.