用微拉曼光谱分析AlGaN/GaN异质结构场效应晶体管的热特性。

Jengsu Yoo, Soo-Kyung Chang, Gunwoo Jung, Kyuheon Kim, Tae-Soo Kim, Jung-Hoon Song, Ho-Young Cha, Sang-Woo Han
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引用次数: 1

摘要

利用微罗曼测量有源AIGaN/GaN中的温度,研究了异质结构场效应晶体管(hfet)的散热问题。通过改变栅极结构,可以清楚地揭示栅极的散热情况。在平面栅极装置上,温度升高到120°C,尽管插入栅极仅升高到37°C。结果表明,与平面浇口结构相比,插入浇口结构的自热效应降低了三倍。利用微拉曼测量的温度映射证实了近栅极区域的温度低于近漏极区域的温度。这表明插入栅电极结构有效地抑制了自热效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of Thermal Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Using Micro-Raman Spectroscopy.

We investigated the heat dissipation in heterostructure field-effect transistors (HFETs) using microRaman measurement of the temperature in active AIGaN/GaN. By varying the gate structure, the heat dissipation through the gate was clearly revealed. The temperature increased to 120 °C at the flat gate device although the inserted gate increased to only 37 °C. Our results showed that the inserted gate structure reduced the self-heating effect by three times compared to the flat gate structure. Temperature mapping using micro-Raman measurement confirmed that the temperature of the near gate area was lower than that of the near drain area. This indicated that the inserted gate electrode structure effectively prohibited self-heating effects.

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来源期刊
Journal of nanoscience and nanotechnology
Journal of nanoscience and nanotechnology 工程技术-材料科学:综合
自引率
0.00%
发文量
0
审稿时长
3.6 months
期刊介绍: JNN is a multidisciplinary peer-reviewed journal covering fundamental and applied research in all disciplines of science, engineering and medicine. JNN publishes all aspects of nanoscale science and technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, theory and computation, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology.
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