Yinan Chen, Huilian Hao, Xuekun Lu, Wenyao Li, Guanjie He, Wenzhong Shen, Paul R Shearing, Dan J L Brett
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引用次数: 13
摘要
杂原子掺杂碳材料具有高比面积和良好的多孔结构,是高性能超级电容器的重要组成部分。本文以硫脲作为还原剂和掺杂剂溶液,通过简单高效的自组装工艺合成了S和N共掺杂的三维多孔石墨烯气凝胶(NS-3DPGHs)。作为SC电极,制备的共掺杂石墨烯,即NS-3DPGH-150样品在0.5 a g-1下具有最高的412.9 F -1的比电容,并且在10,000次循环后具有明显的循环稳定性,电容保持率为96.4%。此外,基于NS-3DPGH-150,在6 M KOH条件下制备的对称超级电容器在249 W kg-1的功率密度下,能量密度达到12.9 Wh kg-1。因此,NS-3DPGHs可以被认为是SCs的优秀候选者。
Porous 3D graphene aerogel co-doped with nitrogen and sulfur for high-performance supercapacitors.
Heteroatom-doped carbon materials with a high specific area, a well-defined porous structure is important to high-performance supercapacitors (SCs). Here, S and N co-doped three-dimensional porous graphene aerogel (NS-3DPGHs) have been synthesized in a facile and efficient self-assembly process with thiourea acting as the reducing and doping agent solution. Operating as a SC electrode, fabricated co-doping graphene, i.e. the sample of NS-3DPGH-150 exhibits the highest specific capacitance of 412.9 F g-1 under 0.5 A g-1 and prominent cycle stabilization with 96.4% capacitance retention in the back of 10 000 cycles. Furthermore, based on NS-3DPGH-150, the symmetrical supercapacitor as-prepared in 6 M KOH displays a superior energy density of 12.9 Wh kg-1 under the power density of 249 W kg-1. Hence, NS-3DPGHs could be considered as an excellent candidate for SCs.
期刊介绍:
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.