{"title":"插入层对铁/氧化镁界面垂直磁各向异性及其电场诱导变化的影响:第一原理研究。","authors":"Yurong Su, Jia Zhang, Jeongmin Hong, Long You","doi":"10.1088/1361-648X/aba721","DOIUrl":null,"url":null,"abstract":"<p><p>The development of ultralow power and high density nonvolatile magnetic random access memory stimulates the search for promising materials in magnetic tunnel junction with large voltage-controlled magnetic anisotropy (VCMA) efficiency. In this work, we investigate the 4<i>d</i>and 5<i>d</i>transition metal interlayer effect on perpendicular magnetic anisotropy (PMA) and VCMA at Fe/MgO interface by using first-principles calculations. Large PMA more than 11 mJ m<sup>-2</sup>is found at Fe/MgO interface with Pt insertion layer and the mechanism for PMA is clarified based on the second order perturbation theory. Furthermore, we find that the magnitude and the sign of VCMA efficiency are varied by introducing different insertions at Fe/MgO interface. The Re and Os interlayers lead to a sizable increase in both of the PMA and the VCMA coefficient. Our findings may further emphasize the essential importance of the interface structure on PMA and VCMA and may offer new material platforms for low-power consumption spintronic devices.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2020-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effect of insertion layer on the perpendicular magnetic anisotropy and its electric-field-induced change at Fe/MgO interface: a first-principles investigation.\",\"authors\":\"Yurong Su, Jia Zhang, Jeongmin Hong, Long You\",\"doi\":\"10.1088/1361-648X/aba721\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The development of ultralow power and high density nonvolatile magnetic random access memory stimulates the search for promising materials in magnetic tunnel junction with large voltage-controlled magnetic anisotropy (VCMA) efficiency. In this work, we investigate the 4<i>d</i>and 5<i>d</i>transition metal interlayer effect on perpendicular magnetic anisotropy (PMA) and VCMA at Fe/MgO interface by using first-principles calculations. Large PMA more than 11 mJ m<sup>-2</sup>is found at Fe/MgO interface with Pt insertion layer and the mechanism for PMA is clarified based on the second order perturbation theory. Furthermore, we find that the magnitude and the sign of VCMA efficiency are varied by introducing different insertions at Fe/MgO interface. The Re and Os interlayers lead to a sizable increase in both of the PMA and the VCMA coefficient. Our findings may further emphasize the essential importance of the interface structure on PMA and VCMA and may offer new material platforms for low-power consumption spintronic devices.</p>\",\"PeriodicalId\":16776,\"journal\":{\"name\":\"Journal of Physics: Condensed Matter\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2020-08-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics: Condensed Matter\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-648X/aba721\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics: Condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1361-648X/aba721","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
The effect of insertion layer on the perpendicular magnetic anisotropy and its electric-field-induced change at Fe/MgO interface: a first-principles investigation.
The development of ultralow power and high density nonvolatile magnetic random access memory stimulates the search for promising materials in magnetic tunnel junction with large voltage-controlled magnetic anisotropy (VCMA) efficiency. In this work, we investigate the 4dand 5dtransition metal interlayer effect on perpendicular magnetic anisotropy (PMA) and VCMA at Fe/MgO interface by using first-principles calculations. Large PMA more than 11 mJ m-2is found at Fe/MgO interface with Pt insertion layer and the mechanism for PMA is clarified based on the second order perturbation theory. Furthermore, we find that the magnitude and the sign of VCMA efficiency are varied by introducing different insertions at Fe/MgO interface. The Re and Os interlayers lead to a sizable increase in both of the PMA and the VCMA coefficient. Our findings may further emphasize the essential importance of the interface structure on PMA and VCMA and may offer new material platforms for low-power consumption spintronic devices.
期刊介绍:
Journal of Physics: Condensed Matter covers the whole of condensed matter physics including soft condensed matter and nanostructures. Papers may report experimental, theoretical and simulation studies. Note that papers must contain fundamental condensed matter science: papers reporting methods of materials preparation or properties of materials without novel condensed matter content will not be accepted.