体寿命对半导体表面复合定量的影响

IF 2.5 3区工程技术 Q3 ENERGY & FUELS

IEEE Journal of Photovoltaics Pub Date : 2023-07-13 DOI:10.1109/JPHOTOV.2023.3291453

Axel Herguth;Joshua Kamphues

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引用次数: 1

摘要

发生在发射层或介电层界面的半导体中过量载流子的复合通常通过利用其特定的注入依赖性的注入依赖寿命测量来评估。一个关键的假设是，整体的重组是可以忽略不计的。在这一贡献中，理论和实验表明，在整体中被忽视的重组及其特定的注射依赖性如何干扰表面钝化质量的正确评估，特别是在研究寿命退化现象的背景下。讨论了衬底掺杂的作用、本体缺陷的寿命限制及其特性。

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On the Impact of Bulk Lifetime on the Quantification of Recombination at the Surface of Semiconductors

Recombination of excess charge carriers in semiconductors occurring in emitter layers or at the interface to dielectric layers is typically assessed via injection-dependent lifetime measurements exploiting its specific injection dependence. A key assumption is that recombination in the bulk is negligible. Within this contribution it is shown in theory and experiment how neglected recombination in the bulk and its specific injection dependence can interfere with the correct assessment of surface passivation quality, in particular in the context of studies on lifetime degradation phenomena. The role of substrate doping, lifetime limitation by bulk defects and their specific properties is discussed.

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来源期刊

IEEE Journal of Photovoltaics ENERGY & FUELS-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

7.00

自引率

10.00%

发文量

206

期刊介绍： The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.