{"title":"多通道线路隧道场效应管栅极间最佳分离与重叠源","authors":"Narasimhulu Thoti;Yiming Li;Sekhar Reddy Kola;Seiji Samukawa","doi":"10.1109/OJNANO.2020.2998939","DOIUrl":null,"url":null,"abstract":"This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (L\n<sub>OV</sub>\n). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and L\n<sub>OV</sub>\n of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si\n<sub>0.6</sub>\nGe\n<sub>0.4</sub>\n. The optimal values of IGS and L\n<sub>OV</sub>\n for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a L\n<sub>OV</sub>\n ≈ L\n<sub>G</sub>\n/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and I\n<sub>on</sub>\n/I\n<sub>off</sub>\n = 10\n<sup>9</sup>\n are achieved.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.2998939","citationCount":"11","resultStr":"{\"title\":\"Optimal Inter-Gate Separation and Overlapped Source of Multi-Channel Line Tunnel FETs\",\"authors\":\"Narasimhulu Thoti;Yiming Li;Sekhar Reddy Kola;Seiji Samukawa\",\"doi\":\"10.1109/OJNANO.2020.2998939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (L\\n<sub>OV</sub>\\n). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and L\\n<sub>OV</sub>\\n of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si\\n<sub>0.6</sub>\\nGe\\n<sub>0.4</sub>\\n. The optimal values of IGS and L\\n<sub>OV</sub>\\n for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a L\\n<sub>OV</sub>\\n ≈ L\\n<sub>G</sub>\\n/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and I\\n<sub>on</sub>\\n/I\\n<sub>off</sub>\\n = 10\\n<sup>9</sup>\\n are achieved.\",\"PeriodicalId\":446,\"journal\":{\"name\":\"IEEE Open Journal of Nanotechnology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1109/OJNANO.2020.2998939\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Open Journal of Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/9104887/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/9104887/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Optimal Inter-Gate Separation and Overlapped Source of Multi-Channel Line Tunnel FETs
This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (L
OV
). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and L
OV
of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si
0.6
Ge
0.4
. The optimal values of IGS and L
OV
for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a L
OV
≈ L
G
/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and I
on
/I
off
= 10
9
are achieved.