1320nm氘处理硅光源

IF 1.8 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Seref Kalem
{"title":"1320nm氘处理硅光源","authors":"Seref Kalem","doi":"10.1109/OJNANO.2020.3025167","DOIUrl":null,"url":null,"abstract":"We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized by treating the surface of Si wafer by vapor of heavy water (D2O) containing a mixture of hydrofluoric and nitric acids. Treatment without deuterium generates an intense light emission band at the band-edge of Si, while the deuterium treatment alone creates a strong emission band at 1320 nm in the near infrared. It was found that the deuterium is actively involved in the formation of a nanostructured Si surface as evidenced from relative strength of the Si-O vibrational modes and presence of N-D bondings. The origin of this photon source was discussed in terms of oxygen related defect states and dislocations. The Si surface treated by Deuterium containing mixture exhibits a strong rectifying electrical activity as it is demonstrated by Schottky diodes fabricated on these wafers. Being compatible with mature silicon circuitry, the source may find applications in photonics and optoelectronics.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2020-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3025167","citationCount":"0","resultStr":"{\"title\":\"1320 nm Light Source From Deuterium Treated Silicon\",\"authors\":\"Seref Kalem\",\"doi\":\"10.1109/OJNANO.2020.3025167\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized by treating the surface of Si wafer by vapor of heavy water (D2O) containing a mixture of hydrofluoric and nitric acids. Treatment without deuterium generates an intense light emission band at the band-edge of Si, while the deuterium treatment alone creates a strong emission band at 1320 nm in the near infrared. It was found that the deuterium is actively involved in the formation of a nanostructured Si surface as evidenced from relative strength of the Si-O vibrational modes and presence of N-D bondings. The origin of this photon source was discussed in terms of oxygen related defect states and dislocations. The Si surface treated by Deuterium containing mixture exhibits a strong rectifying electrical activity as it is demonstrated by Schottky diodes fabricated on these wafers. Being compatible with mature silicon circuitry, the source may find applications in photonics and optoelectronics.\",\"PeriodicalId\":446,\"journal\":{\"name\":\"IEEE Open Journal of Nanotechnology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2020-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3025167\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Open Journal of Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/9200733/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/9200733/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本文报道了一种基于纳米结构硅表面的1320nm通信波长的高效室温光子源。该光源的活化是通过用含有氢氟酸和硝酸混合物的重水(D2O)蒸气处理硅片表面实现的。不含氘的处理在Si的带边处产生一个强发射带,而单独含氘处理在近红外1320nm处产生一个强发射带。从Si- o振动模式的相对强度和N-D键的存在可以看出,氘积极参与了纳米结构Si表面的形成。从氧相关缺陷态和位错的角度讨论了光子源的起源。经含氘混合物处理的硅表面表现出很强的整流电活性,在这些晶圆上制造的肖特基二极管证明了这一点。该源与成熟的硅电路兼容,可以在光子学和光电子学中找到应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
1320 nm Light Source From Deuterium Treated Silicon
We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized by treating the surface of Si wafer by vapor of heavy water (D2O) containing a mixture of hydrofluoric and nitric acids. Treatment without deuterium generates an intense light emission band at the band-edge of Si, while the deuterium treatment alone creates a strong emission band at 1320 nm in the near infrared. It was found that the deuterium is actively involved in the formation of a nanostructured Si surface as evidenced from relative strength of the Si-O vibrational modes and presence of N-D bondings. The origin of this photon source was discussed in terms of oxygen related defect states and dislocations. The Si surface treated by Deuterium containing mixture exhibits a strong rectifying electrical activity as it is demonstrated by Schottky diodes fabricated on these wafers. Being compatible with mature silicon circuitry, the source may find applications in photonics and optoelectronics.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信