电子与光电子用(001)硅上高度不匹配III-V材料的外延生长

IF 4.5 2区 材料科学 Q1 CRYSTALLOGRAPHY
Qiang Li , Kei May Lau
{"title":"电子与光电子用(001)硅上高度不匹配III-V材料的外延生长","authors":"Qiang Li ,&nbsp;Kei May Lau","doi":"10.1016/j.pcrysgrow.2017.10.001","DOIUrl":null,"url":null,"abstract":"<div><p>Monolithic integration of III-V on silicon<span><span> has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the </span>epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.</span></p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"63 4","pages":"Pages 105-120"},"PeriodicalIF":4.5000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2017.10.001","citationCount":"80","resultStr":"{\"title\":\"Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics\",\"authors\":\"Qiang Li ,&nbsp;Kei May Lau\",\"doi\":\"10.1016/j.pcrysgrow.2017.10.001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Monolithic integration of III-V on silicon<span><span> has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the </span>epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.</span></p></div>\",\"PeriodicalId\":409,\"journal\":{\"name\":\"Progress in Crystal Growth and Characterization of Materials\",\"volume\":\"63 4\",\"pages\":\"Pages 105-120\"},\"PeriodicalIF\":4.5000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2017.10.001\",\"citationCount\":\"80\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Crystal Growth and Characterization of Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0960897417300360\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization of Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0960897417300360","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 80

摘要

几十年来,硅上III-V的单片集成一直是一个具有科学吸引力的概念。近年来,由于电子工业对高迁移率通道晶体管的极大兴趣和硅光子学技术的蓬勃发展,这一研究领域取得了显著进展。在这篇综述文章中,我们概述了高度不匹配的III-V材料(包括砷化物、磷化物和锑化物)在(001)取向硅衬底上外延生长的基本障碍。讨论了从微到纳米尺度上异质外延和选择性面积异质外延的研究进展。新兴电子和集成光子学领域的机会也将出现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

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来源期刊
Progress in Crystal Growth and Characterization of Materials
Progress in Crystal Growth and Characterization of Materials 工程技术-材料科学:表征与测试
CiteScore
8.80
自引率
2.00%
发文量
10
审稿时长
1 day
期刊介绍: Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research. Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.
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