镀膜法优化ZnO UV传感器光响应增强

IF 3.261
Mindaugas Ilickas , Mantas Marčinskas , Domantas Peckus , Rasa Mardosaitė , Brigita Abakevičienė , Tomas Tamulevičius , Simas Račkauskas
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引用次数: 0

摘要

现代高性能光电探测器的研究是由同时提高多个参数的需要驱动的,同时还要适应电子器件尺寸的不断减小和保持较低的生产价格。本文通过滴镀、微滴镀、喷涂和槽模涂覆四种方法,将合成的ZnO四足体(ZnO- t)纳米结构沉积在具有不同间隙的电极上。通过优化电极间隙和镀膜方法,获得了单位面积IUV/IDark比值为8.73 × 106的记录值。槽模涂层传感器的最快上升时间为0.78 s,最快衰减时间为0.94 s。阐述了ZnO-T薄膜的高光响应特性,电极间隙大小影响涂层过程中ZnO-T微观结构的形成以及形貌对光响应的影响。我们证明,即使使用相同的优化ZnO-T纳米结构,光响应也可以提高2个数量级。我们的工作显示了涂层形态和电极间隙优化的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

ZnO UV sensor photoresponse enhancement by coating method optimization

ZnO UV sensor photoresponse enhancement by coating method optimization

Modern high-performance photodetector research is driven by the need to simultaneously improve multiple parameters, but also fit the decreasing size of electronics and maintain low production price.  Here, we demonstrated how our synthesized ZnO tetrapod (ZnO-T) nanostructure was deposited on electrodes with variating gap by four coating methods including drop casting, microdrop casting, spray coating and slot-die coating with the same thickness. Optimizing the inter-electrode gap and coating method the record IUV/IDark ratio per unit area value of 8.73 × 106 was obtained. The fastest rise time 0.78 s and fastest decay time 0.94 s were obtained by slot-die coated sensors. High photoresponse of ZnO-Ts, the inter-electrode gap size influences formation of ZnO-T microstructure during coating process and morphology influence on photoresponse was explained. We demonstrate that even with the same optimized ZnO-T nanostructures photoresponse can be improved by 2 orders of magnitude. Our work shows the importance of coating morphology and inter-electrode gap optimization.

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