硅光子学中III-V激光在硅上的集成

IF 7.4 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics Pub Date : 2019-08-01 DOI:10.1016/j.pquantelec.2019.05.002

Mingchu Tang , Jae-Seong Park , Zhechao Wang , Siming Chen , Pamela Jurczak , Alwyn Seeds , Huiyun Liu

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引用次数: 65

摘要

由于缺乏高效的硅基发光源，硅光子集成电路(PICs)的发展一直受到阻碍。由于其间接带隙，块状锗和硅的发光效率非常低。因此，直接带隙III-V型半导体已被广泛用于光子集成电路激光器的有源区域。III-V半导体元件在硅平台上的异构和单片集成被认为是实现硅光子学片上发光源的有前途的解决方案。本文从集成方法和激光性能两方面综述了硅衬底通信波长III-V激光器的最新研究进展。

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Integration of III-V lasers on Si for Si photonics

Development of Si photonic integrated circuits (PICs) has been impeded due to lack of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and Si are very inefficient at emitting light. Therefore, direct-bandgap III-V semiconductors have been extensively exploited for the active region of the lasers for PICs. Heterogeneous and monolithic integration of III-V semiconductor components on Si platforms have been considered as promising solutions to achieve practical on-chip light-emitting sources for Si photonics. This paper reviews the latest developments on telecommunication wavelength III-V lasers integrated on Si substrates, in terms of integration methods and laser performance.

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来源期刊

Progress in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

18.50

自引率

0.00%

发文量

审稿时长

150 days

期刊介绍： Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.