Cr:Colquiriite激光器:现状和进一步发展的挑战

IF 7.4 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Umit Demirbas
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引用次数: 22

摘要

Cr: Colquiriite激光材料(Cr:LiCAF, Cr:LiSAF, Cr:LiSGaF)在可见光区具有较宽的吸收带,可以通过成熟的低成本红色二极管直接泵浦。此外,它们具有近红外宽发射带,可广泛调谐激光操作(720-1110 nm),并通过模式锁定产生低于10-fs的光脉冲。此外,Cr: Colquiriite晶体可以以0.2%/cm的极低损耗水平生长,这使得构建高q空腔成为可能,从而使激光阈值低于1 mW,斜率效率高于50%。用Cr: Colquiriites构建的高q腔可以存储大量腔内激光功率,这引起了人们的极大兴趣:(i)提高腔内非线性过程的效率,如腔内倍频;(ii)最小化飞秒操作中的激光噪声,如定时抖动噪声。然而,从热力学和力学角度看,铬:Colquiriites具有类似玻璃的性质。因此,在连续波和飞秒Cr: Colquiriite激光器及其放大器中,平均功率缩放一直是一个挑战。在本文中,我们将回顾过去几十年在基于二极管泵浦Cr:Colquiriite增益介质开发稳健、低成本、高效、可调谐的连续波和飞秒激光源方面的研究工作。还将讨论未来进展面临的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cr:Colquiriite Lasers: Current status and challenges for further progress

Cr: Colquiriite laser materials (Cr:LiCAF, Cr:LiSAF, Cr:LiSGaF) own broad absorption bands in the visible region that allow direct-diode pumping by well-developed low-cost red diodes. Moreover, they possess broad emission bands in the near infrared that enable widely tunable laser operation (720–1110 nm), and generation of sub-10-fs light pulses via mode-locking. Furthermore, Cr: Colquiriite crystals can be grown with a very low loss level of 0.2%/cm, which enables the construction of high-Q-cavities, resulting in lasing thresholds below 1 mW, and slope efficiencies above 50%. High-Q-cavities constructed with Cr: Colquiriites could store large amount of intracavity laser powers which is off great interest: (i) for increasing the efficiency of intracavity nonlinear processes such as intracavity frequency-doubling, and (ii) for minimizing laser noise such as timing jitter noise in femtosecond operation. However, thermally and mechanically Cr: Colquiriites have glass like properties. Hence, average power scaling has been challenging in the cw and femtosecond Cr: Colquiriite lasers, as well as in their amplifiers. In this paper, we will review research efforts over the last decades, in developing robust, low-cost, highly-efficient, and tunable cw and femtosecond laser sources based on diode-pumped Cr:Colquiriite gain media. Challenges for future progress will also be discussed.

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来源期刊
Progress in Quantum Electronics
Progress in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
18.50
自引率
0.00%
发文量
23
审稿时长
150 days
期刊介绍: Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.
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