Designing high χ copolymer materials for nanotechnology applications: A systematic bulk vs. thin films approach

This review article discusses the origins of self-assembly behavior of linear and non-linear block co- and terpolymers and their application towards the fabrication of high-resolution patterns for nanolithography applications. Comparative analysis for the microphase separation in bulk and thin films is provided, to map the fundamentals of various types of block copolymers (BCPs) inherent properties prior to their use in advanced applications. The opportunities of high-χ/low-N and/or complex architecture co- and terpolymers to self-assemble into nanostructures that are beyond the limitations of current lithographic techniques will be presented. The role of molecular characteristics and immiscibility of the blocks on the formation of sub-10 nm or sub-5 nm structures will be discussed. Recent advances in directed self-assembly (or DSA) enable low defect density, extremely minimal dimensions, facile processability, etching selectivity, low-cost and ability to design various patterns. The opportunities of these strategies will be discussed in the context of technological standard requirements and their potential will be evaluated.