采用刮涂法制备大面积、高性价比的柔性ga2o3自供电日盲紫外探测器

IF 3.2 3区 物理与天体物理 Q2 PHYSICS, APPLIED
Zihao Zhao, Zhiyuan Chen, Zhi Wan, Mingxin Ren, Peilin Zuo, Feng Teng, Peng Hu, Haibo Fan
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引用次数: 0

摘要

随着科学技术的发展,可穿戴柔性器件越来越受到人们的关注,但由于制备工艺复杂、成本高,其发展受到很大限制。在这项工作中,通过一种更具成本效益的刮涂方法,成功构建了具有ga2o3 / ti3c2肖特基接触的柔性大面积自供电太阳盲紫外(UV)光电探测器(sbpd)。所构建的肖特基结极大地促进了载流子的分离,Ti - 3c - 2的存在也大大降低了电荷转移电阻。该探测器在0 V偏压下具有良好的自供电响应和优异的紫外辐照性能,具有高响应率(10.67 mA W−1)、探测率(17.80 * 10 8 jones)和快速响应速度(0.07 s/0.08 s)。通过弯曲实验,也可以证明探测器具有优异的鲁棒性,在30°弯曲100次后仍能保持80%的性能。这项工作为制备大面积、高性价比的柔性sbpd开辟了新的思路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Large-area and cost-effective flexible Ga 2 O 3 based self-powered solar-blind ultraviolet photodetector prepared by scrape coating method
Abstract With the development of science and technology, wearable flexible devices have attracted more and more attention, but their development has been greatly limited due to the complex preparation process and high cost. In this work, a flexible large-area self-powered solar blind ultraviolet (UV) photodetector (SBPDs) with Ga 2 O 3 /Ti 3 C 2 Schottky contact was successfully constructed by a more cost-effective scrape coating method. The constructed Schottky junction greatly promotes the separation of carriers and the presence of Ti 3 C 2 also greatly reduces the charge transfer resistance. The detector has excellent self-powered response and excellent performance under UV irradiation at 0 V bias, with high responsivity (10.67 mA W −1 ), detectivity (17.80 * 10 8 jones) and fast response speed (0.07 s/0.08 s). Through bending experiments, it can also be proved that the detector has excellent robust characteristics and can still maintain 80% performance after 100 times of bending at 30° This work has developed a new idea for the preparation of large-area and cost-effective flexible SBPDs.
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来源期刊
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics 物理-物理:应用
CiteScore
6.80
自引率
8.80%
发文量
835
审稿时长
2.1 months
期刊介绍: This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.
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