基于IC布局文件的晶体管级三维热分析

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Kaili Ding, Kai Sun, Maozheng Liu, Haihang Cui
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引用次数: 0

摘要

随着遵循摩尔定律的芯片集成技术的快速发展,芯片内部局部热点已经成为影响芯片功能和可靠性的关键因素。传统的电路级芯片热分布研究主要集中在二维平面结构分析上。为了解决电路级三维结构热分析的缺失,提出了一种半导体晶体管级三维芯片热分析的新方法。利用芯片布局文件(GDSII文件),构建三维结构并以STP格式导出,兼容COMSOL,即COMSOL。这使得分析晶体管级3D热分布成为可能。通过电路级芯片热分析的实际案例研究,验证了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

3D thermal analysis at transistor level based on IC layout files

3D thermal analysis at transistor level based on IC layout files

With the rapid advancement of chip integration adhering to Moore’s Law, local hotspots within the chip have emerged as critical factors influencing chip functionality and reliability. Traditional research into circuit-level chip thermal distribution remains focused on 2D planar structure analysis. To address the absence of 3D structure thermal analysis at circuit level, a novel methodology for 3D chip thermal analysis at semiconductor transistor level is proposed. By utilizing the chip layout file (GDSII file), the 3D structure is constructed and exported in STP format, compatible with COMSOL, which is a COMSOL. This enables the analysis of transistor-level 3D thermal distribution. The effectiveness of this method is validated through a practical case study involving circuit-level chip thermal analysis.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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