二次电子探测器在嵌入式生物材料研究中的束流电压效应。

Scanning electron microscopy Pub Date : 1986-01-01
C Scala, G Pasquinelli, P Preda, R Laschi
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引用次数: 0

摘要

在常规扫描电子显微镜(SEM)和带扫描附件的透射电子显微镜(STEM)中,用二次电子(SE)检测器对薄和半薄切片进行了广泛的检查。各种参数,特别是波束电压,显示影响最终SE图像(SEI)。在SEM观察中,低初级电子(PE)电压(0.6-2 kV)下的表面对比成像,而高能量(15-30 kV)下的次表面对比占主导地位。在STEM中,通过改变20-100 kV范围内的PE,未检测到显着差异。地表和地下信息同时成像,即使在最高能量下SEI分辨率更好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Beam voltage effects in the study of embedded biological materials by secondary electron detectors.

Thin and semithin sections were extensively examined by the secondary electron (SE) detector in a conventional scanning electron microscope (SEM), and in a transmission electron microscope with a scanning attachment (STEM). Various parameters, in particular the beam voltage, were shown to affect the final SE image (SEI). As for SEM observation, a surface contrast was imaged at low primary electron (PE) voltages (0.6-2 kV), whereas a subsurface contrast predominated at higher energies (15-30 kV). In STEM, significant differences were not detected by varying the PE in the 20-100 kV range. Surface and subsurface information was simultaneously imaged even though the SEI were better resolved at the highest energy.

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