Radiation damage in GaInP/GaAs/Ge triple-junction solar cells induced by energetic proton

The GaInP/GaAs/Ge triple-junction solar cells (3JSCs) serve as the core component of the power supply system in the spacecraft. However, when operated in the space radiation environment, these GaInP/GaAs/Ge 3JSCs will be subjected to space radiation damage, which induces their performance degradation, and even leads to the function failure of the spacecraft supply system. The influence of proton radiation damage (especially energetic proton radiation damage) on solar cells is one of the most important factors induced by space radiation damage. Thus, the experiments of the GaInP/GaAs/Ge 3JSCs irradiated by 17.8 MeV, 60 MeV, and 100 MeV protons at the proton accelerator facility were conducted. The radiation effects on the GaInP/GaAs/Ge 3JSCs induced by different energy protons are compared. The samples were irradiated at the proton fluence of 1 × 10¹¹, 5 × 10¹¹, 1 × 10¹², and 2 × 10¹² p/cm², respectively. The degradations of the normalized open-circuit voltage (V_oc), short-circuit current (I_sc), and maximum power (P_max) induced by different energy protons are analyzed and the degradation mechanisms of the above radiation-sensitive parameters are also demonstrated, and the relationship between the degree of electrical performance degradation and displacement damage dose is obtained.