{"title":"反键态驱动边共享金属硫族化合物的非调和性和低导热性。","authors":"Harpriya Minhas,Rahul Kumar Sharma,Biswarup Pathak","doi":"10.1021/acsami.5c17211","DOIUrl":null,"url":null,"abstract":"Stereochemically active lone pairs (SCALPs) and orbital hybridization in edge-sharing polyhedra play a crucial role in suppressing lattice thermal conductivity (κL) in thermoelectric materials. Strong mixing between pnictogen s- and chalcogen p-orbitals generates active lone pairs, which enhance lattice anharmonicity and lead to ultralow κL. In this study, we leverage machine learning interatomic potential to systematically probe bonding-driven mechanisms and their influence on thermal transport in noncentrosymmetric pnictogen chalcogens. We show that the combined effects of SCALPs, Pn-Pn bonding, and edge-sharing polyhedra enable the formation of antibonding states near the valence band maxima, intensifying phonon scattering. To quantify the underlying anharmonicity, we introduce a set of bonding descriptors─lone pair angle, lone pair distance, ionicity, and hybridization─that capture the influence of local structural motifs and antibonding features near the valence band edge. This bonding-centric framework not only elucidates the origins of ultralow κL but also offers a rational design strategy for accelerating the discovery of high-performance thermoelectric materials.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"150 1","pages":""},"PeriodicalIF":8.2000,"publicationDate":"2025-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Antibonding States Drive Anharmonicity and Low Thermal Conductivity in Edge-Sharing Metal Chalcogenides.\",\"authors\":\"Harpriya Minhas,Rahul Kumar Sharma,Biswarup Pathak\",\"doi\":\"10.1021/acsami.5c17211\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stereochemically active lone pairs (SCALPs) and orbital hybridization in edge-sharing polyhedra play a crucial role in suppressing lattice thermal conductivity (κL) in thermoelectric materials. Strong mixing between pnictogen s- and chalcogen p-orbitals generates active lone pairs, which enhance lattice anharmonicity and lead to ultralow κL. In this study, we leverage machine learning interatomic potential to systematically probe bonding-driven mechanisms and their influence on thermal transport in noncentrosymmetric pnictogen chalcogens. We show that the combined effects of SCALPs, Pn-Pn bonding, and edge-sharing polyhedra enable the formation of antibonding states near the valence band maxima, intensifying phonon scattering. To quantify the underlying anharmonicity, we introduce a set of bonding descriptors─lone pair angle, lone pair distance, ionicity, and hybridization─that capture the influence of local structural motifs and antibonding features near the valence band edge. This bonding-centric framework not only elucidates the origins of ultralow κL but also offers a rational design strategy for accelerating the discovery of high-performance thermoelectric materials.\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"150 1\",\"pages\":\"\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acsami.5c17211\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.5c17211","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Antibonding States Drive Anharmonicity and Low Thermal Conductivity in Edge-Sharing Metal Chalcogenides.
Stereochemically active lone pairs (SCALPs) and orbital hybridization in edge-sharing polyhedra play a crucial role in suppressing lattice thermal conductivity (κL) in thermoelectric materials. Strong mixing between pnictogen s- and chalcogen p-orbitals generates active lone pairs, which enhance lattice anharmonicity and lead to ultralow κL. In this study, we leverage machine learning interatomic potential to systematically probe bonding-driven mechanisms and their influence on thermal transport in noncentrosymmetric pnictogen chalcogens. We show that the combined effects of SCALPs, Pn-Pn bonding, and edge-sharing polyhedra enable the formation of antibonding states near the valence band maxima, intensifying phonon scattering. To quantify the underlying anharmonicity, we introduce a set of bonding descriptors─lone pair angle, lone pair distance, ionicity, and hybridization─that capture the influence of local structural motifs and antibonding features near the valence band edge. This bonding-centric framework not only elucidates the origins of ultralow κL but also offers a rational design strategy for accelerating the discovery of high-performance thermoelectric materials.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.