基于ReS2/MoWSe2范德华异质结构的高性能偏振敏感光电探测器。

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Zimeng He,Li Ding,Shaofei Li,Xing Xie,Shikun Hou,Jun He,Jian-Tao Wang,Zongwen Liu,Yanping Liu
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引用次数: 0

摘要

各向异性二维(2D)材料由于其固有的偏振敏感光电响应,为偏振光检测提供了一个引人注目的平台。然而,基于单一材料的器件通常存在响应性有限、光谱覆盖范围窄和噪声水平升高的问题。本文报道了一种基于各向异性ReS2和三元MoWSe2合金组成的范德华异质结构的高性能偏振敏感光电探测器。该设计将ReS2的偏振相关光学响应与MoWSe2的低缺陷和高效吸收耦合在一起,在零偏压或小负偏压下实现了3.78 × 1014 Jones的高探测率和11.3的显著偏振比。该结的内置电场有效地抑制暗电流并快速分离光生载流子,使该器件能够从可见光(405 nm)到近红外(1064 nm)光谱进行宽带检测。在正向偏压下,器件过渡到光导状态,实现23.22 a /W的响应率。这些发现突出了ReS2/MoWSe2异质结构作为宽带、低噪声和偏振分辨光探测的通用和可扩展平台的潜力,为先进的光电技术提供了可扩展的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Performance Polarization-Sensitive Photodetector Based on ReS2/MoWSe2 van der Waals Heterostructure.
Anisotropic two-dimensional (2D) materials offer a compelling platform for polarized light detection owing to their intrinsic polarization-sensitive optoelectronic responses. However, devices based on single materials often suffer from limited responsivity, narrow spectral coverage, and elevated noise levels. Here we report a high-performance, polarization-sensitive photodetector based on a van der Waals heterostructure composed of anisotropic ReS2 and a ternary MoWSe2 alloy. This design couples the polarization-dependent optical response of ReS2 with the low-defect and highly efficient absorption of MoWSe2, achieving a markedly high detectivity of 3.78 × 1014 Jones and a noticeable polarization ratio of 11.3 under zero or small negative bias. The built-in electric field of the junction effectively suppresses dark current and separates photogenerated carriers rapidly, making the device capable of broadband detection from the visible (405 nm) to near-infrared (1064 nm) spectrum. Under forward bias, the device transitions to a photoconductive regime, achieving a responsivity of 23.22 A/W. These findings highlight the potential of ReS2/MoWSe2 heterostructures as a versatile and scalable platform for broadband, low-noise, and polarization-resolved photodetection, offering a scalable route toward advanced optoelectronic technologies.
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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