基于滴铸Li-ZnO/p-Si异质结的高灵敏度紫外-可见光探测器的研制

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Manish Singh , Mohd. Shahid Khan , Arun Kumar , Stuti Tomar , Tejendra K Gupta , Sunil Kumar , Vijay Kumar , Ravi Kant Choubey
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引用次数: 0

摘要

在本研究中,使用一种成熟、经济的化学共沉淀法合成了原始的和锂掺杂的ZnO纳米颗粒。合成的纳米颗粒通过滴铸技术制备了Ag/ZnO/p-Si/Ag异质结光电探测器,用于紫外和可见光检测。采用XRD, UV-Vis, FTIR, PL, XPS, FESEM, HRTEM和ICP-MS进行了结构,光学和形态表征。XRD证实ZnO形成了六方纤锌矿相,FTIR证实存在Zn-O官能团。PL谱图显示了缺陷相关的发射,而XPS/ICP-MS证实了Zn 2 +和O 2⁻的存在,并成功地结合了Li。利用FESEM和HRTEM对合成的纳米颗粒进行形貌分析。制备的光电探测器具有高效的紫外光响应(50 μW/cm²)和可见光响应(30 mW/cm²),2 % li掺杂ZnO的响应/恢复速度更快,量子效率几乎是原始ZnO的两倍,并且开关稳定。合成的纳米颗粒还显示出对大肠杆菌的抗菌活性,在光检测和生物医学领域具有潜在的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of highly sensitive UV-visible photodetector based on drop-cast Li-ZnO/p-Si heterojunction
In the present study, pristine and Li-doped ZnO nanoparticles were synthesized using a well-established, cost-effective chemical co-precipitation method. The synthesized nanoparticles were used to fabricate Ag/ZnO/p-Si/Ag heterojunction photodetectors through drop-casting technique, targeting UV and visible light detection applications. The Structural, optical, and morphological characterizations were performed using XRD, UV-Vis, FTIR, PL, XPS, FESEM, HRTEM, and ICP-MS. XRD confirmed the formation of the hexagonal wurtzite phase of ZnO while FTIR verified the presence of Zn–O functional groups. The PL spectra indicated defect-related emissions, whereas XPS/ICP-MS confirmed the presence of Zn²⁺ and O²⁻ species and successful incorporation of Li. The morphology of the synthesized nanoparticles was analyzed using FESEM and HRTEM. The fabricated photodetectors showed efficient UV (50 μW/cm²) and visible (30 mW/cm²) light response, with 2 % Li-doped ZnO exhibiting faster response/recovery, nearly double the quantum efficiency of pristine ZnO, and stable switching. The synthesized nanoparticles also displayed antibacterial activity against E. coli, highlighting potential applications in photodetection and biomedical fields.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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