新型4-氨基苯甲酸对甲基磺酸钠单晶光功率调节的三阶NLO行为研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
D. Henista Jarly, A. S. Jebamalar, S. Sindhusha, B. Gunasekaran, G. Vinitha
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引用次数: 0

摘要

以乙醇-水为溶剂,在常温下采用快速慢蒸发法制备了一种新型非线性光学有机单晶,分子式为C14H17NO6S的4-氨基苯甲酸对苯磺酸钠(4APMSM)。通过单晶x射线衍射对合成的4APMSM新型加合物的晶体结构进行了揭示,证实了其结构完整性和晶格参数。三维赫希菲尔德表面分析和二维指纹可视化和量化分子间相互作用在生长的晶体。傅里叶变换红外光谱提供了与功能部分相关的振动模式的见解,并证明了晶格水分子的结合。利用紫外可见吸收光谱和稳态荧光光谱系统地研究了该化合物的光学特性,描述了该化合物的电子跃迁和发光行为。紫外可见光谱的截止波长为278 nm,对应的光学带隙为4.1 eV,证实了4APMSM的低带隙性质及其具有强光学非线性和高效电荷转移的潜力。采用热重分析(TGA)和差热分析(DTA)对热稳定性进行了定量检测,揭示了分解阈值和热事件,稳定性可达183°C。通过维氏显微硬度计评估机械稳健性,量化其对局部变形的抵抗。频率相关的介电测量在一定温度范围内进行,以研究标题化合物的介电响应。此外,通过z扫描技术探测了4.108 × 10⁻12 esu的三阶非线性光学(NLO)磁化率,揭示了该晶体具有先进光子和光电子功能的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Insights into the third-order NLO behaviour of novel 4-aminobenzoate p-methylbenzene sulphonate monohydrate single crystal for optical power regulation

Insights into the third-order NLO behaviour of novel 4-aminobenzoate p-methylbenzene sulphonate monohydrate single crystal for optical power regulation

A novel nonlinear optical organic single-crystal, 4-aminobenzoate p-methylbenzene sulphonate monohydrate (4APMSM) with a molecular formula C14H17NO6S has been successfully synthesized through a facile slow evaporation technique from ethanol-water solvent mixture at ambient temperature. The crystallographic architecture of the synthesized 4APMSM novel adduct was unravelled via single-crystal X-ray diffraction, confirming its structural integrity and lattice parameters. The 3D Hirshfeld surface analysis and 2D fingerprints visualize and quantify intermolecular interactions within the grown crystal. Fourier transform infrared spectroscopy provides insights into the vibrational modes associated with functional moieties and evidence the incorporation of lattice water molecules. The optical characteristics were systematically investigated employing UV–Vis absorption and steady state fluorescence spectroscopy, which delineate the electronic transitions and luminescent behaviour of the title compound. The UV–Vis spectrum revealed a cut-off wavelength of 278 nm, corresponding to an optical band gap of 4.1 eV, affirming 4APMSM’s low band gap nature and its potential for strong optical nonlinearity and efficient charge transfer. Thermal stability was quantitatively examined using thermogravimetric analysis (TGA) coupled with differential thermal analysis (DTA), revealing decomposition thresholds and thermal events, with stability observed up to 183 °C. Mechanical robustness was assessed via Vickers microhardness tester, quantifying its resistance to localized deformation. Frequency-dependent dielectric measurements were carried out over a range of temperatures to study the dielectric response of the title compound. Moreover, third-order nonlinear optical (NLO) susceptibility of 4.108 × 10⁻12 esu was probed through Z-scan technique, revealing the crystal’s potential for advanced photonic and optoelectronic functionalities.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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