掺杂诱导晶体向互补逻辑优先取向实现SnO薄膜晶体管的对称双极性输运。

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-10-17 DOI:10.1021/acs.nanolett.5c04300

Ruohao Hong,Hanzhong Liu,Xinxin Xu,Lin Tang,Xu Yin,Qianlei Tian,Mingyang Cao,Yanrong Wang,Baoxing Zhai,Yu Song,Guoli Li,Jean-Pierre Raskin,Denis Flandre,Wei Zhu,Xingqiang Liu,Xuming Zou,Liming Tang,Penghui He,Lei Liao

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引用次数: 0

摘要

在此，我们提出了一种铥（Tm）掺杂与氧化铪钝化退火相结合的策略，以提高SnO薄膜的择优取向结晶度，从而达到平衡空穴和电子传输。优化后的双极性掺铥SnO薄膜晶体管在导通电压约为0 V时，空穴迁移率和电子迁移率分别为30.1 cm2/V·s和11.8 cm2/V·s。此外，我们使用这些双极性SnO tft制造互补的薄膜逻辑电路，包括逆变器和NAND和NOR门。我们的双极性SnO逆变器在6 V电源电压下获得了474.5 （V/V）的增益记录，这是所有双极性材料体系中报道的最高值，这是由于双极性SnO tft的p型和n型行为相匹配。通过扩大对双极性逆变器行为的理解，这项工作强调了双极性SnO tft在未来高性能互补薄膜电路中的巨大潜力。

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Symmetrical Ambipolar Transport in SnO Thin-Film Transistors Enabled by Dopant-Induced Preferential Crystal Orientation toward Complementary Logic.

Herein, we present a thulium (Tm) doping strategy combined with hafnium oxide passivation annealing to enhance the preferable orientation crystallinity in SnO films toward balanced hole and electron transport. The optimized ambipolar Tm-doped SnO thin-film transistors (TFTs) exhibit hole and electron mobilities of 30.1 cm2/V·s and 11.8 cm2/V·s with a turn-on voltage about 0 V, respectively. Furthermore, we fabricate complementary thin-film logic circuits using these ambipolar SnO TFTs, including inverters and NAND and NOR gates. A record gain of 474.5 (V/V) is obtained for our ambipolar SnO inverter at a supply voltage of 6 V, which is the highest value reported among all ambipolar material systems due to the matched p- and n-type behaviors of the ambipolar SnO TFTs. By expanding the understanding of ambipolar inverter behavior, this work highlights the significant potential of ambipolar SnO TFTs for future high-performance complementary thin-film circuits.

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.