{"title":"宽带（300-2200 nm）全硅肖特基光电探测器，具有超低暗电流，用于近红外通信和成像应用。","authors":"Yongkang Ge, Meihua Yang, Junfeng Yang, Xiaolong Jiang, Shaoying Ke, Jinrong Zhou, Guanzhou Liu, Zhiwei Huang","doi":"10.1364/OL.575450","DOIUrl":null,"url":null,"abstract":"<p><p>This work presents a near-infrared (NIR) Schottky photodetector based on an ITO/Au nanoparticles (NPs)/Al<sub>2</sub>O<sub>3</sub>/Silicon (Si) architecture, exhibiting exceptional dark current suppression (0.4 nA at -2 V) and a broadband photodetection spanning ultraviolet to extended NIR wavelengths (300-2200 nm). The integration of an Au NPs/Al<sub>2</sub>O<sub>3</sub> interlayer at the ITO/Si interface effectively enhances the Schottky barrier height to 0.81 eV, leading to a nearly five-order-of-magnitude reduction in dark current compared with a conventional ITO/Si photodetector. The device achieves self-powered characteristics under zero bias and demonstrates practical room-temperature applications in 1550 nm optical communication systems and 2200 nm imaging scenarios. This design establishes a promising pathway for enabling high-performance NIR photodetectors with ultralow dark current and broadband spectral adaptability.</p>","PeriodicalId":19540,"journal":{"name":"Optics letters","volume":"50 20","pages":"6297-6300"},"PeriodicalIF":3.3000,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Broadband (300-2200 nm) all-Si Schottky photodetector with ultralow dark current for NIR communication and imaging applications.\",\"authors\":\"Yongkang Ge, Meihua Yang, Junfeng Yang, Xiaolong Jiang, Shaoying Ke, Jinrong Zhou, Guanzhou Liu, Zhiwei Huang\",\"doi\":\"10.1364/OL.575450\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>This work presents a near-infrared (NIR) Schottky photodetector based on an ITO/Au nanoparticles (NPs)/Al<sub>2</sub>O<sub>3</sub>/Silicon (Si) architecture, exhibiting exceptional dark current suppression (0.4 nA at -2 V) and a broadband photodetection spanning ultraviolet to extended NIR wavelengths (300-2200 nm). The integration of an Au NPs/Al<sub>2</sub>O<sub>3</sub> interlayer at the ITO/Si interface effectively enhances the Schottky barrier height to 0.81 eV, leading to a nearly five-order-of-magnitude reduction in dark current compared with a conventional ITO/Si photodetector. The device achieves self-powered characteristics under zero bias and demonstrates practical room-temperature applications in 1550 nm optical communication systems and 2200 nm imaging scenarios. This design establishes a promising pathway for enabling high-performance NIR photodetectors with ultralow dark current and broadband spectral adaptability.</p>\",\"PeriodicalId\":19540,\"journal\":{\"name\":\"Optics letters\",\"volume\":\"50 20\",\"pages\":\"6297-6300\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optics letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1364/OL.575450\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1364/OL.575450","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
Broadband (300-2200 nm) all-Si Schottky photodetector with ultralow dark current for NIR communication and imaging applications.
This work presents a near-infrared (NIR) Schottky photodetector based on an ITO/Au nanoparticles (NPs)/Al2O3/Silicon (Si) architecture, exhibiting exceptional dark current suppression (0.4 nA at -2 V) and a broadband photodetection spanning ultraviolet to extended NIR wavelengths (300-2200 nm). The integration of an Au NPs/Al2O3 interlayer at the ITO/Si interface effectively enhances the Schottky barrier height to 0.81 eV, leading to a nearly five-order-of-magnitude reduction in dark current compared with a conventional ITO/Si photodetector. The device achieves self-powered characteristics under zero bias and demonstrates practical room-temperature applications in 1550 nm optical communication systems and 2200 nm imaging scenarios. This design establishes a promising pathway for enabling high-performance NIR photodetectors with ultralow dark current and broadband spectral adaptability.
期刊介绍：
The Optical Society (OSA) publishes high-quality, peer-reviewed articles in its portfolio of journals, which serve the full breadth of the optics and photonics community.
Optics Letters offers rapid dissemination of new results in all areas of optics with short, original, peer-reviewed communications. Optics Letters covers the latest research in optical science, including optical measurements, optical components and devices, atmospheric optics, biomedical optics, Fourier optics, integrated optics, optical processing, optoelectronics, lasers, nonlinear optics, optical storage and holography, optical coherence, polarization, quantum electronics, ultrafast optical phenomena, photonic crystals, and fiber optics. Criteria used in determining acceptability of contributions include newsworthiness to a substantial part of the optics community and the effect of rapid publication on the research of others. This journal, published twice each month, is where readers look for the latest discoveries in optics.
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