长通道三维Dirac半金属Cd3As2纳米线中fabry - p干涉和量子电容的射频检测

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Sung Jin An, , , Jisu Kim, , , Myung-Chul Jung, , , Kidong Park, , , Jeunghee Park, , , Seung-Bo Shim, , , Hakseong Kim, , , Zhuo Bin Siu, , , Mansoor B. A. Jalil, , , Christian Schönenberger, , , Nojoon Myoung*, , , Jungpil Seo*, , and , Minkyung Jung*, 
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引用次数: 0

摘要

我们演示了悬浮长通道Cd3As2纳米线器件的相参输运,使用直流(DC)输运和射频(RF)反射测量。通过将Cd3As2纳米线与片上超导LC谐振器集成,我们实现了电阻和量子电容变化的灵敏检测。在长通道器件(L≈1.8 μm)中,在直流和射频测量中都观察到明显的法布里- p干结(FP)模式,为弹道电子输运提供了有力的证据。射频反射仪揭示了由态密度变化和FP干扰引起的量子电容振荡引起的共振频率的门相关调制。这些振荡表现出一种准周期结构,与直流输运测量中的FP模式密切相关。在Cd3As2纳米线Josephson结(L≈730 nm,超导Al触点)的另一种器件中,FP干涉模式太弱而无法在直流电导中分辨,但可以使用RF反射仪检测到。这些结果证明了我们的Cd3As2纳米线的高质量和RF反射计的多功能性,建立了它们在拓扑量子器件(如Andreev量子比特或闸子架构)中的应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Radio-Frequency Detection of Fabry–Pérot Interference and Quantum Capacitance in Long-Channel Three-Dimensional Dirac Semimetal Cd3As2 Nanowires

Radio-Frequency Detection of Fabry–Pérot Interference and Quantum Capacitance in Long-Channel Three-Dimensional Dirac Semimetal Cd3As2 Nanowires

We demonstrate phase-coherent transport in suspended long-channel Cd3As2 nanowire devices using both direct current (DC) transport and radiofrequency (RF) reflectometry measurements. By integrating Cd3As2 nanowires with on-chip superconducting LC resonators, we achieve sensitive detection of both resistance and quantum capacitance variations. In a long-channel device (L ≈ 1.8 μm), clear Fabry–Pérot (FP) interference patterns are observed in both DC and RF measurements, providing strong evidence for ballistic electron transport. RF reflectometry reveals gate-dependent modulations of the resonance frequency arising from quantum capacitance oscillations induced by changes in the density of states and FP interference. These oscillations exhibit a quasi-periodic structure that closely correlates with the FP patterns in DC transport measurements. In another device of a Cd3As2 nanowire Josephson junction (L ≈ 730 nm, superconducting Al contacts), FP interference patterns are too weak to be resolved in DC conductance but are detectable using RF reflectometry. These results demonstrate the high quality of our Cd3As2 nanowires and the versatility of RF reflectometry, establishing their potential for applications in topological quantum devices such as Andreev qubits or gatemon architectures.

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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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