{"title":"提高光伏性能的梯度结构无铅双钙钛矿太阳能电池策略优化","authors":"Shazia Akhtar Dar*, and , Brajendra Singh Sengar, ","doi":"10.1021/acsaelm.5c01211","DOIUrl":null,"url":null,"abstract":"<p >Lead-free perovskite solar cells (PSCs) based on Cs<sub>2</sub>TiBr<sub>6</sub> are promising for environmentally sustainable photovoltaics, but their efficiency is often constrained by poor band alignment and recombination losses. Here, we use SCAPS-1D simulations to investigate a hole transport layer (HTL)-free Cs<sub>2</sub>TiBr<sub>6</sub> PSC employing an optimized gradient doping (<i>G</i><sub>d</sub>) strategy to overcome these limitations. The absorber layer doping concentration was exponentially graded with a gradient factor <i>G</i> = 300, identified after varying <i>G</i> from 1 to 1000, and paired with reduced bulk (1 × 10<sup>16</sup> cm<sup>–3</sup>) and interfacial (1 × 10<sup>14</sup> cm<sup>–3</sup>) defect densities. This combination enhances the band alignment, strengthens the internal electric field, and suppresses trap-assisted recombination. The resulting device achieves a PCE of 21.0% (Voc = 1.374 V, Jsc = 18.25 mA cm<sup>–2</sup>, FF = 83.69%), outperforming uniformly doped devices (10.85%) and previously reported Cs<sub>2</sub>TiBr<sub>6</sub> PSCs (≤19.30%). These findings establish gradient doping as a practical design pathway for scalable, stable, and high-efficiency lead-free PSCs.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9073–9089"},"PeriodicalIF":4.7000,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Strategic Optimization of Gradient-Structured HTL-free Lead-free Double-Perovskite Solar Cells for Enhanced Photovoltaic Performance\",\"authors\":\"Shazia Akhtar Dar*, and , Brajendra Singh Sengar, \",\"doi\":\"10.1021/acsaelm.5c01211\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Lead-free perovskite solar cells (PSCs) based on Cs<sub>2</sub>TiBr<sub>6</sub> are promising for environmentally sustainable photovoltaics, but their efficiency is often constrained by poor band alignment and recombination losses. Here, we use SCAPS-1D simulations to investigate a hole transport layer (HTL)-free Cs<sub>2</sub>TiBr<sub>6</sub> PSC employing an optimized gradient doping (<i>G</i><sub>d</sub>) strategy to overcome these limitations. The absorber layer doping concentration was exponentially graded with a gradient factor <i>G</i> = 300, identified after varying <i>G</i> from 1 to 1000, and paired with reduced bulk (1 × 10<sup>16</sup> cm<sup>–3</sup>) and interfacial (1 × 10<sup>14</sup> cm<sup>–3</sup>) defect densities. This combination enhances the band alignment, strengthens the internal electric field, and suppresses trap-assisted recombination. The resulting device achieves a PCE of 21.0% (Voc = 1.374 V, Jsc = 18.25 mA cm<sup>–2</sup>, FF = 83.69%), outperforming uniformly doped devices (10.85%) and previously reported Cs<sub>2</sub>TiBr<sub>6</sub> PSCs (≤19.30%). These findings establish gradient doping as a practical design pathway for scalable, stable, and high-efficiency lead-free PSCs.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"7 19\",\"pages\":\"9073–9089\"},\"PeriodicalIF\":4.7000,\"publicationDate\":\"2025-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.5c01211\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.5c01211","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Strategic Optimization of Gradient-Structured HTL-free Lead-free Double-Perovskite Solar Cells for Enhanced Photovoltaic Performance
Lead-free perovskite solar cells (PSCs) based on Cs2TiBr6 are promising for environmentally sustainable photovoltaics, but their efficiency is often constrained by poor band alignment and recombination losses. Here, we use SCAPS-1D simulations to investigate a hole transport layer (HTL)-free Cs2TiBr6 PSC employing an optimized gradient doping (Gd) strategy to overcome these limitations. The absorber layer doping concentration was exponentially graded with a gradient factor G = 300, identified after varying G from 1 to 1000, and paired with reduced bulk (1 × 1016 cm–3) and interfacial (1 × 1014 cm–3) defect densities. This combination enhances the band alignment, strengthens the internal electric field, and suppresses trap-assisted recombination. The resulting device achieves a PCE of 21.0% (Voc = 1.374 V, Jsc = 18.25 mA cm–2, FF = 83.69%), outperforming uniformly doped devices (10.85%) and previously reported Cs2TiBr6 PSCs (≤19.30%). These findings establish gradient doping as a practical design pathway for scalable, stable, and high-efficiency lead-free PSCs.
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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