{"title":"记忆技术的致命弱点","authors":"Mario Lanza, Sebastian Pazos, Fernando Aguirre","doi":"10.1038/s44287-025-00207-0","DOIUrl":null,"url":null,"abstract":"The endurance, retention and system-level performance of memristors for memory and computation has been often misrepresented in articles that lack statistics and use non-standardized characterization and simulation protocols. Here we discuss the origin of these issues, their negative effect in the nascent memristor industry, and potential ways to mitigate them.","PeriodicalId":501701,"journal":{"name":"Nature Reviews Electrical Engineering","volume":"2 10","pages":"654-656"},"PeriodicalIF":0.0000,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Achilles’ heel of memristive technologies\",\"authors\":\"Mario Lanza, Sebastian Pazos, Fernando Aguirre\",\"doi\":\"10.1038/s44287-025-00207-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The endurance, retention and system-level performance of memristors for memory and computation has been often misrepresented in articles that lack statistics and use non-standardized characterization and simulation protocols. Here we discuss the origin of these issues, their negative effect in the nascent memristor industry, and potential ways to mitigate them.\",\"PeriodicalId\":501701,\"journal\":{\"name\":\"Nature Reviews Electrical Engineering\",\"volume\":\"2 10\",\"pages\":\"654-656\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Reviews Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.nature.com/articles/s44287-025-00207-0\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Reviews Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44287-025-00207-0","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The endurance, retention and system-level performance of memristors for memory and computation has been often misrepresented in articles that lack statistics and use non-standardized characterization and simulation protocols. Here we discuss the origin of these issues, their negative effect in the nascent memristor industry, and potential ways to mitigate them.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
