A 6.5 kV/100A Low-Inductance SiC MOSFET Power Module With Integrated Current Monitoring for Parallel Chips

To monitor the operating status and fault behaviour of power modules, this paper proposes a 6.5 kV/100 A silicon carbide (SiC) MOSFET power module capable of monitoring the drain currents of parallel-connected chips. The design combines three key innovations: (1) A structure and integration method for a four-channel printed circuit board (PCB) Rogowski coil used in high-voltage SiC power modules is proposed, exhibiting excellent anti-interference; (2) To reduce both the total module parasitic inductance and package-induced inductance imbalance, a symmetrical layout with pin-type terminals was proposed. (3) A field control method for the 6.5 kV power module is proposed, based on adjusting ceramic thickness and copper layer spacing at the triple junction. The module was fabricated to validate the effectiveness of these innovations. Under 15 kV DC and 50 Hz square-wave voltage conditions, no repetitive partial discharge exceeding 10 pC or leakage current above 1 µA was observed. The power loop parasitic inductance was measured as approximately 14.94 nH using an impedance analyser. Finally, the static and dynamic characteristics of the module were validated through static parameter analysis and double-pulse testing. The integrated PCB Rogowski coils monitored the drain current through each chip during double-pulse tests, showing good agreement with measurements from the commercial high-bandwidth Pearson coil.