B. Prakash , A. Anto Jeffery , A. Vimala Juliet , Farhat S. Khan , Mohd Taukeer Khan , I.M. Ashraf , Mohd Shkir
{"title":"基于Ti1-xZnxO2薄膜的新型氨气体传感器的设计与制造","authors":"B. Prakash , A. Anto Jeffery , A. Vimala Juliet , Farhat S. Khan , Mohd Taukeer Khan , I.M. Ashraf , Mohd Shkir","doi":"10.1016/j.radphyschem.2025.113355","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> thin films were developed using nebulizer assisted spray pyrolysis technique by altering the Zn concentration 0, 1, 2, 3, 4 and 5 wt%. The prepared gas sensors were characterised by various techniques to understand their structural, surface morphological, elemental, optical, and gas sensing properties. The crystalline structure of the synthesized thin films was found to be a tetragonal crystal system and an increasing trend on crystallite size with the rise of Zn concentration from 0 to 3 wt%. The surface morphology was studied by FESEM, and it was found that the film with x = 3 wt% Zn possessed a uniform morphology. The optical band gap of the Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> thin films decreased to 3.44 eV–3.34 eV with the introduction of Zn in the host matrix. At 3 wt% of Zn, thin film of Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> exhibited higher photoluminescence peaks which occurred due to oxygen defect sites created in the TiO<sub>2</sub> host. The significant gas detection characteristics such as gas response over ammonia detection and faster gas rise/fall time were observed as 1590, 7.8/10s, respectively for Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> thin film developed at 3 wt% of Zn. These results demonstrate that at 3 wt% Zn, the Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> film-based sensor could serve as an effective and low-cost alternative to conventional gas sensors.</div></div>","PeriodicalId":20861,"journal":{"name":"Radiation Physics and Chemistry","volume":"239 ","pages":"Article 113355"},"PeriodicalIF":2.8000,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and fabrication of novel Ti1-xZnxO2 thin films-based devices for improved ammonia gas sensor applications\",\"authors\":\"B. Prakash , A. Anto Jeffery , A. Vimala Juliet , Farhat S. Khan , Mohd Taukeer Khan , I.M. Ashraf , Mohd Shkir\",\"doi\":\"10.1016/j.radphyschem.2025.113355\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> thin films were developed using nebulizer assisted spray pyrolysis technique by altering the Zn concentration 0, 1, 2, 3, 4 and 5 wt%. The prepared gas sensors were characterised by various techniques to understand their structural, surface morphological, elemental, optical, and gas sensing properties. The crystalline structure of the synthesized thin films was found to be a tetragonal crystal system and an increasing trend on crystallite size with the rise of Zn concentration from 0 to 3 wt%. The surface morphology was studied by FESEM, and it was found that the film with x = 3 wt% Zn possessed a uniform morphology. The optical band gap of the Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> thin films decreased to 3.44 eV–3.34 eV with the introduction of Zn in the host matrix. At 3 wt% of Zn, thin film of Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> exhibited higher photoluminescence peaks which occurred due to oxygen defect sites created in the TiO<sub>2</sub> host. The significant gas detection characteristics such as gas response over ammonia detection and faster gas rise/fall time were observed as 1590, 7.8/10s, respectively for Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> thin film developed at 3 wt% of Zn. These results demonstrate that at 3 wt% Zn, the Ti<sub>1-x</sub>Zn<sub>x</sub>O<sub>2</sub> film-based sensor could serve as an effective and low-cost alternative to conventional gas sensors.</div></div>\",\"PeriodicalId\":20861,\"journal\":{\"name\":\"Radiation Physics and Chemistry\",\"volume\":\"239 \",\"pages\":\"Article 113355\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Radiation Physics and Chemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0969806X25008473\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation Physics and Chemistry","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0969806X25008473","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Design and fabrication of novel Ti1-xZnxO2 thin films-based devices for improved ammonia gas sensor applications
In this work, Ti1-xZnxO2 thin films were developed using nebulizer assisted spray pyrolysis technique by altering the Zn concentration 0, 1, 2, 3, 4 and 5 wt%. The prepared gas sensors were characterised by various techniques to understand their structural, surface morphological, elemental, optical, and gas sensing properties. The crystalline structure of the synthesized thin films was found to be a tetragonal crystal system and an increasing trend on crystallite size with the rise of Zn concentration from 0 to 3 wt%. The surface morphology was studied by FESEM, and it was found that the film with x = 3 wt% Zn possessed a uniform morphology. The optical band gap of the Ti1-xZnxO2 thin films decreased to 3.44 eV–3.34 eV with the introduction of Zn in the host matrix. At 3 wt% of Zn, thin film of Ti1-xZnxO2 exhibited higher photoluminescence peaks which occurred due to oxygen defect sites created in the TiO2 host. The significant gas detection characteristics such as gas response over ammonia detection and faster gas rise/fall time were observed as 1590, 7.8/10s, respectively for Ti1-xZnxO2 thin film developed at 3 wt% of Zn. These results demonstrate that at 3 wt% Zn, the Ti1-xZnxO2 film-based sensor could serve as an effective and low-cost alternative to conventional gas sensors.
期刊介绍:
Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing.
The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.