Emad M. Ahmed, Sultan J. Alsufyani, Shurug T. Althagafi, A. H. Ashour
{"title":"γ射线辐照ZrCeO4NPs/壳聚糖纳米复合材料:结构与物理性能的相关性","authors":"Emad M. Ahmed, Sultan J. Alsufyani, Shurug T. Althagafi, A. H. Ashour","doi":"10.1007/s10854-025-15954-x","DOIUrl":null,"url":null,"abstract":"<div><p>This study explores the enhancement of dielectric, thermal, and structural properties of chitosan-polyvinyl alcohol (CS-PVA) nanocomposites through the incorporation of zirconium cerium oxide (ZrCeO<sub>4</sub>) nanoparticles (NPs) and subsequent gamma irradiation treatments. A series of ZrCeO<sub>4</sub>NPs/CS-PVA films were prepared via solution casting with varying nanoparticle concentrations (1%, 2%, and 3% by weight) and irradiated at gamma doses of 5, 15, and 25 kGy. Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) confirmed strong interfacial interactions and modifications in the crystalline structure of the CS-PVA matrix upon nanoparticle additions. Scanning electron microscopy (SEM) demonstrated homogeneous dispersion of ZrCeO<sub>4</sub>NPs within the matrix, leading to a denser structure and smoother surface morphology at higher nanoparticle concentrations. Thermogravimetric analysis (TGA) revealed improved thermal stability with increasing ZrCeO<sub>4</sub>NPs contents, indicating enhanced material resistance to decomposition. Dielectric measurements showed that the real part of the dielectric constant (<i>ε</i>') significantly increased at lower frequencies, especially for nanocomposites irradiated at 15 kGy, suggesting an optimal balance between interfacial polarization and matrix integrity. A marked reduction in dielectric loss (<i>ε</i>'') with increasing frequency was observed, attributed to limited dipole reorientation at higher frequencies. The relaxation time and activation energy, derived from frequency-dependent tangent loss data, demonstrated that gamma irradiation optimizes dielectric performance by modulating relaxation mechanisms within the nanocomposites. The combined effects of ZrCeO<sub>4</sub>Nps and gamma radiation provide a novel route for tuning the dielectric properties of CS-PVA composites, making them highly suitable for advanced dielectric applications in flexible electronics, sensors, and energy storage devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 28","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gamma-rays irradiated ZrCeO4NPs/chitosan nanocomposites: correlation between structure and physical properties\",\"authors\":\"Emad M. Ahmed, Sultan J. Alsufyani, Shurug T. Althagafi, A. H. Ashour\",\"doi\":\"10.1007/s10854-025-15954-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study explores the enhancement of dielectric, thermal, and structural properties of chitosan-polyvinyl alcohol (CS-PVA) nanocomposites through the incorporation of zirconium cerium oxide (ZrCeO<sub>4</sub>) nanoparticles (NPs) and subsequent gamma irradiation treatments. A series of ZrCeO<sub>4</sub>NPs/CS-PVA films were prepared via solution casting with varying nanoparticle concentrations (1%, 2%, and 3% by weight) and irradiated at gamma doses of 5, 15, and 25 kGy. Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) confirmed strong interfacial interactions and modifications in the crystalline structure of the CS-PVA matrix upon nanoparticle additions. Scanning electron microscopy (SEM) demonstrated homogeneous dispersion of ZrCeO<sub>4</sub>NPs within the matrix, leading to a denser structure and smoother surface morphology at higher nanoparticle concentrations. Thermogravimetric analysis (TGA) revealed improved thermal stability with increasing ZrCeO<sub>4</sub>NPs contents, indicating enhanced material resistance to decomposition. Dielectric measurements showed that the real part of the dielectric constant (<i>ε</i>') significantly increased at lower frequencies, especially for nanocomposites irradiated at 15 kGy, suggesting an optimal balance between interfacial polarization and matrix integrity. A marked reduction in dielectric loss (<i>ε</i>'') with increasing frequency was observed, attributed to limited dipole reorientation at higher frequencies. The relaxation time and activation energy, derived from frequency-dependent tangent loss data, demonstrated that gamma irradiation optimizes dielectric performance by modulating relaxation mechanisms within the nanocomposites. The combined effects of ZrCeO<sub>4</sub>Nps and gamma radiation provide a novel route for tuning the dielectric properties of CS-PVA composites, making them highly suitable for advanced dielectric applications in flexible electronics, sensors, and energy storage devices.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 28\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15954-x\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15954-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Gamma-rays irradiated ZrCeO4NPs/chitosan nanocomposites: correlation between structure and physical properties
This study explores the enhancement of dielectric, thermal, and structural properties of chitosan-polyvinyl alcohol (CS-PVA) nanocomposites through the incorporation of zirconium cerium oxide (ZrCeO4) nanoparticles (NPs) and subsequent gamma irradiation treatments. A series of ZrCeO4NPs/CS-PVA films were prepared via solution casting with varying nanoparticle concentrations (1%, 2%, and 3% by weight) and irradiated at gamma doses of 5, 15, and 25 kGy. Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) confirmed strong interfacial interactions and modifications in the crystalline structure of the CS-PVA matrix upon nanoparticle additions. Scanning electron microscopy (SEM) demonstrated homogeneous dispersion of ZrCeO4NPs within the matrix, leading to a denser structure and smoother surface morphology at higher nanoparticle concentrations. Thermogravimetric analysis (TGA) revealed improved thermal stability with increasing ZrCeO4NPs contents, indicating enhanced material resistance to decomposition. Dielectric measurements showed that the real part of the dielectric constant (ε') significantly increased at lower frequencies, especially for nanocomposites irradiated at 15 kGy, suggesting an optimal balance between interfacial polarization and matrix integrity. A marked reduction in dielectric loss (ε'') with increasing frequency was observed, attributed to limited dipole reorientation at higher frequencies. The relaxation time and activation energy, derived from frequency-dependent tangent loss data, demonstrated that gamma irradiation optimizes dielectric performance by modulating relaxation mechanisms within the nanocomposites. The combined effects of ZrCeO4Nps and gamma radiation provide a novel route for tuning the dielectric properties of CS-PVA composites, making them highly suitable for advanced dielectric applications in flexible electronics, sensors, and energy storage devices.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.