γ射线辐照ZrCeO4NPs/壳聚糖纳米复合材料:结构与物理性能的相关性

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Emad M. Ahmed, Sultan J. Alsufyani, Shurug T. Althagafi, A. H. Ashour
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引用次数: 0

摘要

本研究探讨了壳聚糖-聚乙烯醇(CS-PVA)纳米复合材料通过加入氧化锆铈(ZrCeO4)纳米颗粒(NPs)和随后的伽马辐射处理来增强介电、热和结构性能。通过溶液浇铸法制备了不同纳米颗粒浓度(重量比为1%、2%和3%)的ZrCeO4NPs/CS-PVA薄膜,并在5、15和25 kGy的伽马剂量下辐照。傅里叶变换红外光谱(FTIR)和x射线衍射(XRD)证实,纳米颗粒的加入对CS-PVA基体的晶体结构产生了强烈的界面作用和改变。扫描电镜(SEM)结果表明,ZrCeO4NPs在基体内分散均匀,在纳米颗粒浓度较高时结构更致密,表面形貌更光滑。热重分析(TGA)表明,随着ZrCeO4NPs含量的增加,材料的热稳定性得到改善,表明材料的抗分解能力增强。介电测量表明,在较低的频率下,特别是在15 kGy辐照下,纳米复合材料的介电常数的实部(ε’)显著增加,表明界面极化和基体完整性之间达到了最佳平衡。随着频率的增加,介质损耗(ε”)显著降低,这是由于偶极子在高频处定向受限。从频率相关的切损数据得出的弛豫时间和活化能表明,伽马辐照通过调节纳米复合材料内部的弛豫机制来优化介电性能。ZrCeO4Nps和γ辐射的联合效应为调整CS-PVA复合材料的介电性能提供了新的途径,使其非常适合于柔性电子、传感器和储能设备中的高级介电应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gamma-rays irradiated ZrCeO4NPs/chitosan nanocomposites: correlation between structure and physical properties

This study explores the enhancement of dielectric, thermal, and structural properties of chitosan-polyvinyl alcohol (CS-PVA) nanocomposites through the incorporation of zirconium cerium oxide (ZrCeO4) nanoparticles (NPs) and subsequent gamma irradiation treatments. A series of ZrCeO4NPs/CS-PVA films were prepared via solution casting with varying nanoparticle concentrations (1%, 2%, and 3% by weight) and irradiated at gamma doses of 5, 15, and 25 kGy. Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) confirmed strong interfacial interactions and modifications in the crystalline structure of the CS-PVA matrix upon nanoparticle additions. Scanning electron microscopy (SEM) demonstrated homogeneous dispersion of ZrCeO4NPs within the matrix, leading to a denser structure and smoother surface morphology at higher nanoparticle concentrations. Thermogravimetric analysis (TGA) revealed improved thermal stability with increasing ZrCeO4NPs contents, indicating enhanced material resistance to decomposition. Dielectric measurements showed that the real part of the dielectric constant (ε') significantly increased at lower frequencies, especially for nanocomposites irradiated at 15 kGy, suggesting an optimal balance between interfacial polarization and matrix integrity. A marked reduction in dielectric loss (ε'') with increasing frequency was observed, attributed to limited dipole reorientation at higher frequencies. The relaxation time and activation energy, derived from frequency-dependent tangent loss data, demonstrated that gamma irradiation optimizes dielectric performance by modulating relaxation mechanisms within the nanocomposites. The combined effects of ZrCeO4Nps and gamma radiation provide a novel route for tuning the dielectric properties of CS-PVA composites, making them highly suitable for advanced dielectric applications in flexible electronics, sensors, and energy storage devices.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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