Yueyue Wang, Minming Yan, Shunyu Wang, Danni Chen, Qilin Zhang, Yi Su, Dongwen Zou, Meili Xu, Hong Chen, Hong Meng
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引用次数: 0
摘要
阴极界面层对提高有机光电二极管的性能起着至关重要的作用。然而,体异质结(BHJ)/CILs/电极的成膜不良、取向和聚集倾向以及界面接触增加了暗电流,从而限制了光检测。本研究设计并合成了以二辛基芴(F)为π桥,n -二甲氨基丙基-1,8-萘酰亚胺(NA)为末端基团的非熔融共轭小分子(FNA)。作为CIL,它显著地改变了BHJ/CILs/电极的界面,并最小化了暗电流密度(Jd)。使用PTB7-Th:IEICO-4F作为BHJ,基于fna的opd实现了1.12 × 10−8 a cm−2的极低Jd (- 0.5 V)和8.23 × 1012 Jones (940 nm)的峰值比检出率,优于使用PDINN作为CIL的传统器件。这些改进是由于改进的界面接触降低了Jd,并通过减少fna基光电二极管的耗尽区宽度增加了光响应。此外,5 × 5 OPD像素阵列的均匀光响应进一步验证了其成像应用的潜力。
The cathode interface layers (CILs) play a crucial role in enhancing the performance of organic photodiodes (OPDs). However, the poor film formation, the tendency of orientation and aggregation, and contact in the interface of the bulk heterojunction (BHJ)/CILs/electrode increase the dark current, leading to a limitation of light detection. In this study, we designed and synthesized a nonfused conjugated small molecule (FNA) with dioctyl fluorene (F) as the π-bridge and N-dimethylaminopropyl-1,8-naphthalimide (NA) as terminal groups. As the CIL, it significantly modifies the interfaces of BHJ/CILs/electrode and minimizes dark current density (Jd). Using PTB7-Th:IEICO-4F as the BHJ, FNA-based OPDs achieve a remarkably low Jd of 1.12 × 10−8 A cm−2 (at −0.5 V) and a peak specific detectivity of 8.23 × 1012 Jones (940 nm), outperforming conventional devices with PDINN as CIL. These improvements are attributed to lower Jd by modified interfacial contact and increased photoresponse by reducing depletion region width in FNA-based photodiodes. Furthermore, uniform photoresponse in 5 × 5 OPD pixel arrays further validates its potential for imaging applications.