Li-Tien Huang, Redhwan Moqbel, Chi Chen, Ming-Hao Lee, Chi-Cheng Lee, Nannan Mao, Tianyi Zhang, Yunyue Zhu, Jing Kong, Kung-Hsuan Lin
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引用次数: 0
摘要
采用实验和理论两种方法研究了具有铁电堆叠的少层SnSe的二次谐波产生(SHG)磁化率。理论计算预测,在1.2 eV下,该晶体的最大体SHG磁化率为2444 pm V−1,比典型的非线性晶体大3个数量级。实验结果表明,在1.19 eV下测得的最大值为1424 pm V−1,与理论预测非常吻合。实验观察到的各向异性SHG模式与基于材料点群对称性的理论预测一致。在1.19 ~ 1.55 eV范围内测量了SHG模式的光子能量依赖关系,以探索不同SHG磁化率的相对强度。值得注意的是,测得的χ y y y (2) $\chi_{y y y}^{\left(\right. 2 \left.\right)}$明显大于实体AC-SnSe的理论值,这可能是由于应变效应以及实际SnSe少层样品中铁电和反铁电堆叠构型的混合。
Anisotropy of Second-Harmonic Generation in SnSe Flakes with Ferroelectric Stacking
The second-harmonic generation (SHG) susceptibilities of few-layer SnSe with ferroelectric stacking are investigated using both experimental and theoretical approaches. Theoretical calculations predict a maximum bulk SHG susceptibility of 2444 pm V−1 at 1.2 eV, which is three orders of magnitude larger than that of typical nonlinear crystals. Experimentally, a maximum value of 1424 pm V−1 at 1.19 eV in close agreement with the theoretical prediction is measured. The anisotropic SHG patterns observed experimentally align with theoretical predictions based on the material's point group symmetry. The photon-energy dependence of SHG patterns is also measured within the range of 1.19 to 1.55 eV to explore the relative strengths of various SHG susceptibilities. Notably, the measured is significantly larger than the theoretical value of bulk AC-SnSe, likely due to the strain effects and the mixing of ferroelectric and antiferroelectric stacking configurations in the practical SnSe few-layer samples.